公开(公告)号：US20110162426A1

公开(公告)日：2011-07-07

申请号：US13020375

申请日：2011-02-03

申请人： Ryuichi INOUE ,  Nozomu KAWABE ,  Nobuyuki MORI ,  Masatada NUMANO ,  Junichi MATSUMOTO ,  Motonori NAKAMURA ,  Masayuki NISHIZAWA ,  Atsushi KIMURA ,  Yukihiro OISHI

发明人： Ryuichi INOUE ,  Nozomu KAWABE ,  Nobuyuki MORI ,  Masatada NUMANO ,  Junichi MATSUMOTO ,  Motonori NAKAMURA ,  Masayuki NISHIZAWA ,  Atsushi KIMURA ,  Yukihiro OISHI

IPC分类号： B21B3/00

CPC分类号： C22C23/04 ,  C22C23/00 ,  C22C23/02 ,  C22F1/06

摘要： The invention offers a magnesium alloy sheet having excellent warm plastic formability, a production method thereof, and a formed body produced by performing warm plastic forming on this sheet. The magnesium alloy sheet is produced by giving a predetermined strain to a rolled sheet RS that is not subjected to a heat treatment aiming at recrystallization. The sheet is not subjected to the foregoing heat treatment even after the giving of a strain. The strain is given through the process described below. A rolled sheet RS is heated in a heating furnace 10. The heated rolled sheet RS is passed between rollers 21 to give bending to the rolled sheet RS. The giving of a strain is performed such that the strain-given sheet has a half peak width of 0.20 deg or more and 0.59 deg or less in a (0004) diffraction peak in monochromatic X-ray diffraction. The alloy sheet exhibits high plastic deformability by forming continuous recrystallization during warm plastic forming through the use of the remaining strain.

摘要翻译： 本发明提供一种具有优异的耐热塑性成形性的镁合金板及其制造方法，以及通过在该片上进行热塑性成形而制成的成形体。 通过对未进行再结晶的热处理的轧制板RS给予规定的应变来制造镁合金板。 即使施加了应变，片材也不进行上述的热处理。 通过下述方法给出菌株。 轧制板RS在加热炉10中被加热。加热的轧制板RS在辊21之间通过，以使轧制板RS弯曲。 进行应变的施加使得在单色X射线衍射中的（0004）衍射峰中，应变给定片的半峰宽度为0.20度以上且0.59度以下。 通过使用剩余的应变，通过在热塑性成型期间形成连续的再结晶，合金板表现出高的塑性变形性。

公开(公告)号：US20100112213A1

公开(公告)日：2010-05-06

申请号：US12610708

申请日：2009-11-02

申请人： Motonori NAKAMURA ,  Yoshinobu MORI ,  Takeshi MASUDA ,  Hidenori KOBAYASHI ,  Kazuhiro NARAHARA

发明人： Motonori NAKAMURA ,  Yoshinobu MORI ,  Takeshi MASUDA ,  Hidenori KOBAYASHI ,  Kazuhiro NARAHARA

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4586 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12

摘要： In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.

摘要翻译： 在用于制造具有与基座大致同心地安装的晶片的外延晶片的制造装置中，设置中心杆，以在基座的非安装表面的一侧沿上下方向延伸， 上端邻近基座的中心。 利用这种布置，朝向基座照射的一部分辐射光在到达基座的中心部分之前被中心棒漫反射，从而减少了照射到基座的中心部分的辐射光的量以及降低温度 的部分。 由于中心杆和基座不与表面接触，所以中心杆不会从基座受热，从而抑制温度在基座的中心部分局部减小。

公开(公告)号：US20100272892A1

公开(公告)日：2010-10-28

申请号：US12752383

申请日：2010-04-01

申请人： Hidenori KOBAYASHI ,  Kouichi NISHIKIDO ,  Motonori NAKAMURA

发明人： Hidenori KOBAYASHI ,  Kouichi NISHIKIDO ,  Motonori NAKAMURA

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/4584 ,  C23C16/52

摘要： A plurality of partial control zones (an LL zone, an LR zone, and an R zone) that can control a gas flow rate independently in a widthwise direction of a gas flow are configured on an upstream side of the gas inlet port 20B. A control device 66 is disposed to control a gas flow rate for respective partial control zones. The control device 66 obtains a deviation between a film growth rate and a predetermined target film growth rate at a variety of locations on a wafer 28 based on the data of a thickness of a film that has been formed on the wafer 28 by a rotating film formation carried out while rotating the wafer 28, and controls the respective gas flow rates of the partial control zones by using the rotation film growth sensitivity data 72 that defines a sensitivity to a change in a film growth rate distribution during the rotating film formation on the wafer 28 in such a manner that a change in the respective gas flow rates of the partial control zones causes the deviation at a variety of the locations to be reduced.

摘要翻译： 在气体导入口20B的上游侧，配置能够在气流的宽度方向独立地控制气体流量的多个部分控制区域（LL区域，LR区域，R区域）。 设置控制装置66以控制各个部分控制区的气体流量。 控制装置66基于通过旋转膜在晶片28上形成的膜的厚度的数据，获得晶片28上的各种位置处的膜生长速率和预定的目标膜生长速度之间的偏差 在旋转晶片28的同时进行形成，并且通过使用旋转膜生长灵敏度数据72来控制部分控制区域的各自的气体流量，旋转膜生长灵敏度数据72限定对旋转成膜期间的膜生长速率分布的变化的灵敏度 晶片28，使得部分控制区域的各个气体流量的变化导致各种位置处的偏差减小。

公开(公告)号：US20080283875A1

公开(公告)日：2008-11-20

申请号：US11956002

申请日：2007-12-13

申请人： Koichi MUKASA ,  Kazuhisa SUEOKA ,  Seiji TAKEDA ,  Satoshi HATTORI ,  Yoshiki YAMADA ,  Makoto SAWAMURA ,  Hiroichi OZAKI ,  Atsushi ISHII ,  Motonori NAKAMURA ,  Hirotaka HOSOI

发明人： Koichi MUKASA ,  Kazuhisa SUEOKA ,  Seiji TAKEDA ,  Satoshi HATTORI ,  Yoshiki YAMADA ,  Makoto SAWAMURA ,  Hiroichi OZAKI ,  Atsushi ISHII ,  Motonori NAKAMURA ,  Hirotaka HOSOI

IPC分类号： H01L29/78

CPC分类号： H01L51/0512 ,  B82Y10/00 ,  B82Y15/00 ,  G01N27/4145 ,  G01N27/4146 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/19107 ,  Y10S977/746 ,  Y10S977/747 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/924 ,  Y10S977/957 ,  Y10S977/958 ,  Y10S977/959 ,  H01L2924/00

摘要： A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.

摘要翻译： 使用碳纳米管作为通道超细纤维元件的高灵敏度场效应晶体管和使用它的生物传感器。 场效应晶体管包括衬底，设置在衬底上的源电极和漏电极，用于将源电极与漏电极电连接的沟道和由于衬底中的自由电子的移动引起极化的栅电极。 例如，基板具有由半导体或金属构成的支撑基板，形成在支撑基板的第一面上的第一绝缘膜和形成在支撑基板的第二表面上的第二绝缘膜，源电极，漏极 电极和布置在第一绝缘膜上的通道，栅电极设置在第二绝缘膜上。