公开(公告)号：US20130095660A1

公开(公告)日：2013-04-18

申请号：US13807082

申请日：2011-07-01

申请人： Ryuichi Tanimoto ,  Shinya Sadohara ,  Takeru Takushima

发明人： Ryuichi Tanimoto ,  Shinya Sadohara ,  Takeru Takushima

IPC分类号： H01L21/306

CPC分类号： H01L21/30625 ,  B24B37/044 ,  H01L21/02024

摘要： To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final polishing, the weakly basic aqueous solution having an alkali concentration that reduces a haze value of a final-polished surface below the haze value of the finish-polished surface of the wafer is used as the chief component of the final polishing solution.

摘要翻译： 使用最终抛光溶液最终抛光精抛光表面，其主要成分是不含磨粒的弱碱性水溶液。 在最终研磨中，将作为最终抛光液的主要成分的碱处理浓度降低到最终抛光面的雾度值以下的弱碱性水溶液，作为最终研磨面的主要成分。

公开(公告)号：US08877643B2

公开(公告)日：2014-11-04

申请号：US13376259

申请日：2010-05-28

申请人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

发明人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

IPC分类号： H01L21/461 ,  H01L21/02 ,  B24B37/04 ,  C09G1/02

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  Y10S438/959

摘要： This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

摘要翻译： 本发明提供一种抛光硅晶片的方法，其中可以获得与常规抛光方法相同的高平整度，并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生 以及抛光的硅晶片。 通过将含有磨粒的抛光溶液供给到抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法，其特征在于，研磨剂的数量 包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。

公开(公告)号：US20120080775A1

公开(公告)日：2012-04-05

申请号：US13376259

申请日：2010-05-28

申请人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

发明人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

IPC分类号： H01L21/306 ,  H01L29/34

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  Y10S438/959

摘要： This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer.The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

摘要翻译： 本发明提供一种抛光硅晶片的方法，其中可以获得与常规抛光方法相同的高平整度，并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生 以及抛光的硅晶片。 通过将含有磨粒的抛光溶液供给到抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法，其特征在于，研磨剂的数量 包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。

公开(公告)号：US08147295B2

公开(公告)日：2012-04-03

申请号：US12472480

申请日：2009-05-27

申请人： Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

发明人： Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

IPC分类号： B24B1/00

CPC分类号： H01L21/02024

摘要： A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

摘要翻译： 通过将基本上不含磨粒的抛光液施加到具有给定的固定颗粒粘结研磨剂的抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来抛光硅晶片，其中 通过提供在硅晶片的表面和抛光垫的表面之间的抛光溶液形成水平面层，并且控制水平面层的厚度以改变硅晶片的表面的抛光状态。

公开(公告)号：US20090298394A1

公开(公告)日：2009-12-03

申请号：US12472480

申请日：2009-05-27

申请人： Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

发明人： Takeo Katoh ,  Ryuichi Tanimoto ,  Shinichi Ogata ,  Takeru Takushima ,  Kazushige Takaishi

IPC分类号： B24B1/00

CPC分类号： H01L21/02024

摘要： A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

摘要翻译： 通过将基本上不含磨粒的抛光液施加到具有给定的固定颗粒粘结研磨剂的抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来抛光硅晶片，其中 通过提供在硅晶片的表面和抛光垫的表面之间的抛光溶液形成水平面层，并且控制水平面层的厚度以改变硅晶片的表面的抛光状态。