公开(公告)号：US20070145527A1

公开(公告)日：2007-06-28

申请号：US11642896

申请日：2006-12-21

申请人： Ryuji Yamabi ,  Hiroshi Yano

发明人： Ryuji Yamabi ,  Hiroshi Yano

IPC分类号： H01L29/00

CPC分类号： H01L27/0605 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides of the capacitor and each of at least two sides of the electrode pad is adjacent to each other at a given interval. The capacitor has a connecting side that connects the two sides of the capacitor and faces to the electrode pad. Outside angles of the capacitor formed by the connecting side and the two sides of the capacitor are more than 90 degrees.

摘要翻译： 半导体器件具有电极焊盘，电容器和衬底。 衬底具有布置有电极焊盘和电容器的给定区域。 电极焊盘和电容器布置在基板上，使得电容器的至少两侧和电极焊盘的至少两侧中的每一侧以给定的间隔彼此相邻。 电容器具有将电容器的两侧连接到电极焊盘的连接侧。 由电容器的连接侧和两侧形成的电容器的外部角度大于90度。

公开(公告)号：US20080135961A1

公开(公告)日：2008-06-12

申请号：US12003111

申请日：2007-12-20

申请人： Ryuji Yamabi ,  Hiroshi Yano

发明人： Ryuji Yamabi ,  Hiroshi Yano

IPC分类号： H01L31/00

CPC分类号： H01L27/0605 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides of the capacitor and each of at least two sides of the electrode pad is adjacent to each other at a given interval. The capacitor has a connecting side that connects the two sides of the capacitor and faces to the electrode pad. Outside angles of the capacitor formed by the connecting side and the two sides of the capacitor are more than 90 degrees.

公开(公告)号：US07332758B2

公开(公告)日：2008-02-19

申请号：US11642896

申请日：2006-12-21

申请人： Ryuji Yamabi ,  Hiroshi Yano

发明人： Ryuji Yamabi ,  Hiroshi Yano

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/0605 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides of the capacitor and each of at least two sides of the electrode pad is adjacent to each other at a given interval. The capacitor has a connecting side that connects the two sides of the capacitor and faces to the electrode pad. Outside angles of the capacitor formed by the connecting side and the two sides of the capacitor are more than 90 degrees.

摘要翻译： 半导体器件具有电极焊盘，电容器和衬底。 衬底具有布置有电极焊盘和电容器的给定区域。 电极焊盘和电容器布置在基板上，使得电容器的至少两侧和电极焊盘的至少两侧中的每一侧以给定的间隔彼此相邻。 电容器具有将电容器的两侧连接到电极焊盘的连接侧。 由电容器的连接侧和两侧形成的电容器的外部角度大于90度。

公开(公告)号：US07692227B2

公开(公告)日：2010-04-06

申请号：US12003111

申请日：2007-12-20

申请人： Ryuji Yamabi ,  Hiroshi Yano

发明人： Ryuji Yamabi ,  Hiroshi Yano

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/0605 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides of the capacitor and each of at least two sides of the electrode pad is adjacent to each other at a given interval. The capacitor has a connecting side that connects the two sides of the capacitor and faces to the electrode pad. Outside angles of the capacitor formed by the connecting side and the two sides of the capacitor are more than 90 degrees.

摘要翻译： 半导体器件具有电极焊盘，电容器和衬底。 衬底具有布置有电极焊盘和电容器的给定区域。 电极焊盘和电容器布置在基板上，使得电容器的至少两侧和电极焊盘的至少两侧中的每一侧以给定的间隔彼此相邻。 电容器具有将电容器的两侧连接到电极焊盘的连接侧。 由电容器的连接侧和两侧形成的电容器的外部角度大于90度。

公开(公告)号：US07696593B2

公开(公告)日：2010-04-13

申请号：US11771588

申请日：2007-06-29

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： H01L31/0304 ,  H01L31/0264

CPC分类号： H01L31/105 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/18

摘要： A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

摘要翻译： 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底，第一半导体层，第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上，与半导体衬底晶格匹配，包括第一导电型掺杂剂，并且具有第一带隙能量。 第二半导体层设置在第一半导体层上，具有第一带隙能量，并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量，并且具有5nm至50nm的厚度。

公开(公告)号：US08698270B2

公开(公告)日：2014-04-15

申请号：US13117718

申请日：2011-05-27

申请人： Ryuji Yamabi

发明人： Ryuji Yamabi

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00 ,  H01L29/417

CPC分类号： H01L29/417 ,  H01L24/06 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/035281 ,  H01L31/105 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48463 ,  Y02E10/50 ,  H01L2924/00014

摘要： A semiconductor light receiving device includes: a substrate having a rectangular shape with first through fourth corners, a multilayer structure formed on the substrate, a light receiving part having a mesa structure positioned at a first corner side from a center part of the rectangular shape of the substrate, a first electrode pad provided on the semiconductor substrate, and a second electrode pad provided on the semiconductor substrate so as to be close to a second corner diagonally opposite to the first corner, a first minimum distance between the second electrode pad and an edge of the substrate being longer than a second minimum distance between the first electrode pad and the edge of the substrate.

摘要翻译： 半导体光接收装置包括：具有第一至第四角的矩形形状的基板，形成在基板上的多层结构，具有台状结构的光接收部，该台面结构位于从矩形的中心部分的第一角侧 所述基板，设置在所述半导体基板上的第一电极焊盘和设置在所述半导体基板上以与所述第一拐角对角相对的第二角度靠近的第二电极焊盘，所述第二电极焊盘与所述第二电极焊盘之间的第一最小距离 衬底的边缘比第一电极焊盘和衬底的边缘之间的第二最小距离长。

公开(公告)号：US20110291221A1

公开(公告)日：2011-12-01

申请号：US13117718

申请日：2011-05-27

申请人： Ryuji Yamabi

发明人： Ryuji Yamabi

IPC分类号： H01L31/103

CPC分类号： H01L29/417 ,  H01L24/06 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/035281 ,  H01L31/105 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48463 ,  Y02E10/50 ,  H01L2924/00014

摘要： A semiconductor light receiving device includes: a substrate having a rectangular shape with first through fourth corners, a multilayer structure formed on the substrate, a light receiving part having a mesa structure positioned at a first corner side from a center part of the rectangular shape of the substrate, a first electrode pad provided on the semiconductor substrate, and a second electrode pad provided on the semiconductor substrate so as to be close to a second corner diagonally opposite to the first corner, a first minimum distance between the second electrode pad and an edge of the substrate being longer than a second minimum distance between the first electrode pad and the edge of the substrate.

摘要翻译： 半导体光接收装置包括：具有第一至第四角的矩形形状的基板，形成在基板上的多层结构，具有台状结构的光接收部，该台面结构位于从矩形的中心部分的第一角侧 所述基板，设置在所述半导体基板上的第一电极焊盘和设置在所述半导体基板上以与所述第一拐角对角相对的第二角度靠近的第二电极焊盘，所述第二电极焊盘与所述第二电极焊盘之间的第一最小距离 衬底的边缘比第一电极焊盘和衬底的边缘之间的第二最小距离长。

公开(公告)号：US20080237452A1

公开(公告)日：2008-10-02

申请号：US12059232

申请日：2008-03-31

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： H01J40/14

CPC分类号： H01L25/167 ,  G02B6/4257 ,  H01L31/02161 ,  H01L31/105 ,  H01L2924/0002 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/0264 ,  H01L2924/00

摘要： An optical semiconductor module that includes: a light emitting element; a light receiving element that has a light receiving face on an upper face and a side face thereof, with the light receiving face having an antireflection film formed thereon; and a mounting unit that has the light emitting element and the light receiving element mounted thereon with such a positional relationship that the light emitted from the light emitting element is optically connected at least on the light receiving face of the side face of the light receiving element.

摘要翻译： 一种光学半导体模块，包括：发光元件; 光接收元件，其在上表面和侧面具有光接收面，其中所述光接收面具有形成在其上的防反射膜; 以及安装单元，其具有安装有发光元件和受光元件的位置关系，使得从发光元件发射的光至少在光接收元件的侧面的光接收面上光学连接 。

公开(公告)号：US08105866B2

公开(公告)日：2012-01-31

申请号：US12711881

申请日：2010-02-24

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： H01L21/00 ,  H01L31/102 ,  H01L21/027 ,  H01L21/20

CPC分类号： H01L31/105 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/18

摘要： A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

摘要翻译： 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底，第一半导体层，第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上，与半导体衬底晶格匹配，包括第一导电型掺杂剂，并且具有第一带隙能量。 第二半导体层设置在第一半导体层上，具有第一带隙能量，并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量，并且具有5nm至50nm的厚度。

公开(公告)号：US07807954B2

公开(公告)日：2010-10-05

申请号：US12059232

申请日：2008-03-31

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： G01J1/42

CPC分类号： H01L25/167 ,  G02B6/4257 ,  H01L31/02161 ,  H01L31/105 ,  H01L2924/0002 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/0264 ,  H01L2924/00

摘要： An optical semiconductor module with a light receiving element with an upper and side light receiving face and a light emitting element mounted on the same mounting carrier. The light receiving element has a light receiving face on an upper face and a side face covered with an antireflection film. The mounting unit has the light emitting element and the light receiving element mounted so that they encompass a positional relationship that the light emitted from the light emitting element is optically connected at least on the light receiving face of the side face of the light receiving element.

摘要翻译： 一种具有光接收元件的光学半导体模块，其具有上和下光接收面以及安装在同一安装载体上的发光元件。 光接收元件具有在上表面上的光接收面和被防反射膜覆盖的侧面。 安装单元具有安装发光元件和受光元件，使得它们包含从发光元件发射的光至少在光接收元件的侧面的光接收面上光学连接的位置关系。