公开(公告)号：US08629522B2

公开(公告)日：2014-01-14

申请号：US13608818

申请日：2012-09-10

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US08598050B2

公开(公告)日：2013-12-03

申请号：US13001311

申请日：2009-06-19

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01L21/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  B23K26/0738 ,  C30B1/023 ,  C30B29/06

摘要： Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

摘要翻译： 公开了一种激光退火方法和装置，其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜，该结晶半导体薄膜具有良好的 性能和高均匀性，使得接缝部分不能在视觉上识别。 在直线光束的照射期间，对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽，并且掩模10被操作以使屏蔽量周期性地 增加和减少。

公开(公告)号：US08446924B2

公开(公告)日：2013-05-21

申请号：US13418653

申请日：2012-03-13

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01S3/10

CPC分类号： B23K26/0608 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/082 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268

摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。

公开(公告)号：US20110097907A1

公开(公告)日：2011-04-28

申请号：US13001311

申请日：2009-06-19

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01L21/268 ,  B23K26/06

CPC分类号： H01L21/02678 ,  B23K26/066 ,  B23K26/0738 ,  C30B1/023 ,  C30B29/06

摘要： Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable.During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

摘要翻译： 公开了一种激光退火方法和装置，其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜，该结晶半导体薄膜具有良好的 性能和高均匀性，使得接缝部分不能在视觉上识别。 在直线光束的照射期间，对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽，并且掩模10被操作以使屏蔽量周期性地 增加和减少。

公开(公告)号：US08339613B2

公开(公告)日：2012-12-25

申请号：US13428297

申请日：2012-03-23

申请人： Ryusuke Kawakami ,  Miyuki Masaki

发明人： Ryusuke Kawakami ,  Miyuki Masaki

IPC分类号： G01B11/14

CPC分类号： B23K26/03 ,  B23K26/083 ,  G01J1/4257 ,  H01L21/268 ,  H01L31/20

摘要： A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.

公开(公告)号：US20110008973A1

公开(公告)日：2011-01-13

申请号：US12811818

申请日：2008-05-30

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01L21/268 ,  B23K26/06 ,  B23K26/067 ,  B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/082 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268

摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。

公开(公告)号：US20100221898A1

公开(公告)日：2010-09-02

申请号：US12159259

申请日：2006-11-07

申请人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

发明人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

IPC分类号： H01L21/268 ,  B23K26/06

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

摘要翻译： 施加到非晶半导体膜（非晶硅膜）的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列26或光导36以及集中光学系统28和44或通过使用包括衍射的光学系统在矩形激光束的短边方向上的能量分布 光学元件。 因此，由于施加到非晶半导体膜的激光束的有效能量范围变宽，能够提高基板3的输送速度，所以能够提高激光退火的处理能力。

公开(公告)号：US20100022102A1

公开(公告)日：2010-01-28

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/268 ,  H01L21/64

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20090219548A1

公开(公告)日：2009-09-03

申请号：US12361284

申请日：2009-01-28

申请人： Ryusuke Kawakami ,  Miyuki Masaki

发明人： Ryusuke Kawakami ,  Miyuki Masaki

IPC分类号： G01B11/14 ,  G01N37/00

CPC分类号： B23K26/03 ,  B23K26/083 ,  G01J1/4257 ,  H01L21/268 ,  H01L31/20

摘要： A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.

摘要翻译： 一种用于制造用于评估激光照射位置和评估样品的样品的方法，以及可在第一半导体模式和第二模式制备和评估样品之间切换的装置。 具体而言，通过在半导体基板以比修正处理速度高的评价速度移动半导体基板进行评价的状态下照射用于评价的半导体基板，样本中的脉冲照射区域之间的各相对位置信息为 评价脉冲照射区域之间的每个相对位置信息的提取和稳定性。 评价速度是使样本上的脉冲照射区域沿移动方向彼此分离的速度。

公开(公告)号：US08575515B2

公开(公告)日：2013-11-05

申请号：US13002010

申请日：2009-06-17

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Jun Izawa ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Jun Izawa ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： B23K26/00 ,  B23K26/02 ,  H01L21/268

CPC分类号： H01L21/268 ,  B23K26/0853 ,  B23K26/127 ,  B23K26/128 ,  B23K26/147 ,  B23K26/702 ,  B23K2103/56 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/67115

摘要： A laser annealing apparatus is provided that is capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of the laser light due to fluctuation in the temperature of inert gas. The laser annealing apparatus includes a gas supply unit for supplying inert gas G to at least a laser irradiation area of a workpiece, and a gas temperature controller for regulating the temperature of the inert gas G. The gas temperature controller controls the temperature of the inert gas G supplied to the laser irradiation area so as to decrease a temperature difference between the temperature of the inert gas G and the atmospheric temperature of a space (a room R) that is disposed outside the supply area of the inert gas so the temperature controlled inert gas surrounds the optical path of the laser light.

摘要翻译： 提供一种激光退火装置，其能够减少由于惰性气体的温度波动引起的激光的折射现象引起的激光的照射不均匀性。 激光退火装置包括用于向工件的至少激光照射区域供给惰性气体G的气体供给单元和用于调节惰性气体G的温度的气体温度控制器。气体温度控制器控制惰性气体的温度 气体G供应到激光照射区域，以便降低惰性气体G的温度与设置在惰性气体的供给区域之外的空间（室R）的气氛温度之间的温度差，从而控制温度 惰性气体围绕激光的光路。