公开(公告)号：US20150348782A1

公开(公告)日：2015-12-03

申请号：US14600113

申请日：2015-01-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Kwon CHOO ,  Sang-Hoon AHN ,  Byoung-Ho CHEONG ,  Joo-Woan CHO ,  Hyun-Jin CHO ,  Soo-Yeon HAN

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02683 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/14698

Abstract: An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.

Abstract translation: 一种用于使薄膜晶体管的有源层结晶的装置，该装置包括：向基板照射第一光束的第一激光器，基板上的非晶层通过第一光束可结晶到薄膜晶体管的有源层中;以及 将第二光束照射到所述基板以加热所述有源层的第二激光器，所述第二光束在所述第一和第二光束的扫描方向上具有不对称的强度分布。

公开(公告)号：US20170145259A1

公开(公告)日：2017-05-25

申请号：US15355917

申请日：2016-11-18

Applicant: SAMSUNG DISPLAY CO., LTD. ,  UBmaterials lnc.

Inventor： Byoung-Kwon CHOO ,  Jin-Hyung PARK ,  Jeong-Kyun NA ,  Joon-Hwa BAE ,  Byoung-Ho CHEONG ,  Joo-Woan CHO ,  In-Sun HWANG

IPC: C09G1/02 ,  H01L29/786 ,  H01L21/306 ,  H01L27/12 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  B81C2201/0104 ,  C09K3/1409 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/3212 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78675

Abstract: A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.