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公开(公告)号：US20200227668A1
公开(公告)日：2020-07-16
申请号：US16836005
申请日：2020-03-31
发明人： JAYBUM KIM , EOKSU KIM , KYOUNGSEOK SON , JUNHYUNG LIM , JIHUN LIM
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20200219953A1
公开(公告)日：2020-07-09
申请号：US16820102
申请日：2020-03-16
发明人： KYOUNGSEOK SON , JAYBUM KIM , EOKSU KIM , JUNHYUNG LIM , JIHUN LIM
IPC分类号： H01L27/32 , H01L21/02 , H01L21/4757 , H01L29/66 , H01L29/786
摘要： A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.
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公开(公告)号：US20210074943A1
公开(公告)日：2021-03-11
申请号：US17082379
申请日：2020-10-28
发明人： JAYBUM KIM , EOKSU KIM , KYOUNGSEOK SON , JUNHYUNG LIM , JIHUN LIM
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20190326543A1
公开(公告)日：2019-10-24
申请号：US16459060
申请日：2019-07-01
发明人： JAYBUM KIM , EOKSU KIM , KYOUNGSEOK SON , JUNHYUNG LIM , JIHUN LIM
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor, The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20210074944A1
公开(公告)日：2021-03-11
申请号：US17082459
申请日：2020-10-28
发明人： JAYBUM KIM , EOKSU KIM , KYOUNGSEOK SON , JUNHYUNG LIM , JIHUN LIM
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20200328369A1
公开(公告)日：2020-10-15
申请号：US16911525
申请日：2020-06-25
发明人： JAYBUM KIM , EOKSU KIM , KYOUNGSEOK SON , JUNHYUNG LIM , JIHUN LIM
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20180069190A1
公开(公告)日：2018-03-08
申请号：US15657369
申请日：2017-07-24
发明人： JAYBUM KIM , EOKSU KIM , KYOUNGSEOK SON , JUNHYUNG LIM , JIHUN LIM
CPC分类号： H01L51/5203 , G09G3/32 , G09G3/3233 , G09G2300/0426 , G09G2300/0814 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0245 , G09G2310/0262 , H01L27/1108 , H01L27/3262 , H01L27/3265 , H01L51/0023 , H01L51/0096 , H01L51/5296 , H01L2227/323
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20180061920A1
公开(公告)日：2018-03-01
申请号：US15683121
申请日：2017-08-22
发明人： KYOUNGSEOK SON , JAYBUM KIM , EOKSU KIM , JUNHYUNG LIM , JIHUN LIM
IPC分类号： H01L27/32 , H01L29/786 , H01L29/66 , H01L21/4757 , H01L21/02
CPC分类号： H01L27/3262 , H01L21/02164 , H01L21/02178 , H01L21/47573 , H01L27/1222 , H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L27/1262 , H01L27/127 , H01L27/3258 , H01L27/3265 , H01L28/60 , H01L29/24 , H01L29/66757 , H01L29/66969 , H01L29/78675 , H01L29/7869 , H01L2227/323
摘要： A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.
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