公开(公告)号：US20200235181A1

公开(公告)日：2020-07-23

申请号：US16836490

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KYOUNGSEOK SON ,  Dohyun KWON ,  Jonghan JEONG ,  Jonghyun CHOI ,  Eoksu KIM ,  Jaybum KIM ,  Junhyung LIM ,  Jihun LIM

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20200227668A1

公开(公告)日：2020-07-16

申请号：US16836005

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20200219953A1

公开(公告)日：2020-07-09

申请号：US16820102

申请日：2020-03-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KYOUNGSEOK SON ,  JAYBUM KIM ,  EOKSU KIM ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L27/32 ,  H01L21/02 ,  H01L21/4757 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.

公开(公告)号：US20210074943A1

公开(公告)日：2021-03-11

申请号：US17082379

申请日：2020-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L51/52 ,  G09G3/3233 ,  H01L27/11 ,  H01L27/32 ,  H01L51/00 ,  G09G3/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20190326543A1

公开(公告)日：2019-10-24

申请号：US16459060

申请日：2019-07-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L51/52 ,  G09G3/3233 ,  H01L51/00 ,  G09G3/32 ,  H01L27/11 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor, The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20210074944A1

公开(公告)日：2021-03-11

申请号：US17082459

申请日：2020-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L51/52 ,  G09G3/3233 ,  H01L27/11 ,  H01L27/32 ,  H01L51/00 ,  G09G3/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20200328369A1

公开(公告)日：2020-10-15

申请号：US16911525

申请日：2020-06-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L51/52 ,  G09G3/3233 ,  G09G3/32 ,  H01L51/00 ,  H01L27/11 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20180069190A1

公开(公告)日：2018-03-08

申请号：US15657369

申请日：2017-07-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/11

CPC classification number: H01L51/5203 ,  G09G3/32 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0245 ,  G09G2310/0262 ,  H01L27/1108 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/0023 ,  H01L51/0096 ,  H01L51/5296 ,  H01L2227/323

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20180061920A1

公开(公告)日：2018-03-01

申请号：US15683121

申请日：2017-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KYOUNGSEOK SON ,  JAYBUM KIM ,  EOKSU KIM ,  JUNHYUNG LIM ,  JIHUN LIM

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L21/02

CPC classification number: H01L27/3262 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/47573 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3258 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/24 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2227/323

Abstract: A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.