公开(公告)号：US20170179164A1

公开(公告)日：2017-06-22

申请号：US15337401

申请日：2016-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SHINIL CHOI ,  HYUNMIN CHO ,  SANGGAB KIM ,  SUNGHOON YANG ,  YUGWANG JEONG ,  BYUNGDU AHN

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1333 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2201/123 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L2029/42388 ,  H01L2227/323

Abstract: A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.

公开(公告)号：US20200006701A1

公开(公告)日：2020-01-02

申请号：US16440668

申请日：2019-06-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JOONGEOL LEE ,  KYEONGSU KO ,  SANGGAB KIM ,  SHINIL CHOI

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/00

Abstract: A display panel includes a substrate having an opening area, and a display area at least partially surrounding the opening area. Display elements are arranged in the display area. The display elements includes a pixel electrode, an opposite electrode, and an intermediate layer interposed therebetween. A multilayer film includes a first insulating layer between the substrate and the pixel electrode and a second insulating layer, of a different material, on the first insulating layer. A thin film encapsulation layer covers the display elements and includes at least one organic encapsulation layer and at least one inorganic encapsulation layer. The multilayer film includes a first groove disposed between the opening area and the display area. The first groove has an undercut structure in which a lower width of the first groove is greater than an upper width of the first groove.