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1.
公开(公告)号:US09127368B2
公开(公告)日:2015-09-08
申请号:US14318815
申请日:2014-06-30
发明人: Seon-il Kim , In-Bae Kim , Hongsick Park , Jong-Hyun Choung , Inseol Kuk , Suckjun Lee , Giyong Nam , Youngchul Park , Inho Yu , Youngjin Yoon
IPC分类号: H01L21/3213 , C09K13/06 , C09K13/08 , C23F1/18
CPC分类号: C23F1/18 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1262
摘要: An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.
摘要翻译: 蚀刻剂包括基于蚀刻剂的总量约0.5至约20重量%的过硫酸盐,约0.01至约2重量%的氟化合物,约1至约10重量%的无机酸 ,约0.5至约5重量%的唑化合物,约0.1至约5重量%的给电子化合物,约0.1至约5重量%的氯化合物,约0.05至约3重量% 的铜盐,约0.1至约10重量%的有机酸或有机酸盐,以及剩余量的水。
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2.
公开(公告)号:US10465296B2
公开(公告)日:2019-11-05
申请号:US15005614
申请日:2016-01-25
发明人: Soomin An , Youngjun Kim , Hongsick Park , Inseol Kuk , Youngchul Park , Inho Yu , Seungsoo Lee , Jongmun Lee , Daesung Lim
IPC分类号: C23F1/18 , C23F1/26 , H01L27/12 , H01L21/3213 , H01L29/49
摘要: An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
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公开(公告)号:US11225721B2
公开(公告)日:2022-01-18
申请号:US16284629
申请日:2019-02-25
发明人: Jinhyung Kim , Joohwan Chung , Jinsook Kim , Haccheol Kim , Byungsu Lee , Changsoo Kim , Jungseek Jung , Dongki Kim , Sangtae Kim , Giyong Nam , Youngchul Park , Kyungbo Shim , Daesung Lim , Sanghoon Jang
IPC分类号: C23F1/30 , H01L21/3213 , C09K13/04 , C09K13/00 , H01L21/465 , C09K13/06 , H01L21/302 , H01L21/306 , H01L29/786 , C23F1/16
摘要: A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.
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