公开(公告)号：US20190131225A1

公开(公告)日：2019-05-02

申请号：US15976387

申请日：2018-05-10

申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

发明人： Kwang Ok JEONG ,  Dong Won KANG ,  Young Gwan KO ,  Ik Jun CHOI ,  Jung Soo BYUN

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L25/18 ,  H01L23/538 ,  H01L25/00

CPC分类号： H01L23/49822 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/49894 ,  H01L23/5383 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2924/013 ,  H01L2924/00014

摘要： A semiconductor package includes: a semiconductor chip having an active surface having connection pads disposed thereon; a connection member disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads; a passivation layer disposed on the connection member; and an underbump metallurgy (UBM) layer embedded in the passivation layer and electrically connected to the redistribution layer of the connection member, wherein the UBM layer includes a UBM pad embedded in the passivation layer, at least one plating layer disposed on the UBM pad and having side surfaces of which at least portions are covered by the UBM pad, and a UBM via penetrating through at least portions of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other.