公开(公告)号：US20210242229A1

公开(公告)日：2021-08-05

申请号：US17218267

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNG IL LEE ,  Yu Jin Seo ,  Jun Eon Jin

IPC: H01L27/11565 ,  H01L27/11524 ,  H01L27/11556 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11519

Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.

公开(公告)号：US20190013206A1

公开(公告)日：2019-01-10

申请号：US15844681

申请日：2017-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon PARK ,  Joong Shik SHIN ,  BYOUNG IL LEE ,  Jong Ho WOO ,  Eun Taek JUNG ,  Jun Ho CHA

IPC: H01L21/3105 ,  H01L27/11531 ,  H01L21/763 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/11573 ,  H01L27/11592

Abstract: A semiconductor device includes a substrate having a first region and a second region, the first region including memory cells, and the second region including transistors for driving the memory cells, and device isolation regions disposed within the substrate to define active regions of the substrate. The active regions include a first guard active region surrounding the first region, a second guard active region surrounding a portion of the second region, and at least one dummy active region disposed between the first guard active region and the second guard active region.

公开(公告)号：US20190115366A1

公开(公告)日：2019-04-18

申请号：US16212240

申请日：2018-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNG IL LEE ,  Joong Shik Shin ,  Dong Seog Eun ,  Kyung Jun Shin ,  Hyun Kook Lee

IPC: H01L27/11582 ,  H01L27/02 ,  H01L27/11565

Abstract: A vertical memory device is provided as follows. A substrate has a cell array region and a connection region adjacent to the cell array region. A first gate stack includes gate electrode layers spaced apart from each other in a first direction perpendicular to the substrate. The gate electrode layers extends from the cell array region to the connection region in a second direction perpendicular to the first direction to form a first stepped structure on the connection region. The first stepped structure includes a first gate electrode layer and a second gate electrode layer sequentially stacked. The second gate electrode layer includes a first region having the same length as a length of the first gate electrode layer and a second region having a shorter length than the length of the first gate electrode layer.

公开(公告)号：US20190355737A1

公开(公告)日：2019-11-21

申请号：US16227985

申请日：2018-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNG IL LEE ,  YU JIN SEO ,  JUN EON JIN

IPC: H01L27/11565 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/528 ,  H01L23/522

Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.