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    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
    3.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210242229A1

    公开(公告)日：2021-08-05

    申请号：US17218267

    申请日：2021-03-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： BYOUNG IL LEE ,  Yu Jin Seo ,  Jun Eon Jin

    IPC: H01L27/11565 ,  H01L27/11524 ,  H01L27/11556 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11519

    Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.

    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 有权

    公开(公告)号：US20240397719A1

    公开(公告)日：2024-11-28

    申请号：US18791831

    申请日：2024-08-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joon Sung Kim ,  Byoung Il Lee ,  Seong-Hun Jeong ,  Jun Eon Jin

    IPC: H10B43/27 ,  G11C7/18 ,  G11C8/14 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/40

    Abstract: A semiconductor memory device with improved reliability and a related method are provided. The semiconductor memory device includes a mold structure including a plurality of gate electrodes and a plurality of mold insulating films on a first substrate, a channel structure penetrating the mold structure and crossing a respective level of each of the gate electrodes, a plurality of first insulating patterns in the mold structure, the first insulating patterns including a material different from that of the mold insulating films, and a first through via in the first insulating patterns, the first through via penetrating the first substrate and the mold structure. The gate electrodes include a first word line and a second word line on the first word line. A first distance from the first word line to the first through via is different from a second distance from the second word line to the first through via.

    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 有权

    公开(公告)号：US20210265389A1

    公开(公告)日：2021-08-26

    申请号：US17037074

    申请日：2020-09-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joon Sung Kim ,  Byoung Il Lee ,  Seong-Hun Jeong ,  Jun Eon Jin

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11519 ,  H01L27/11526 ,  H01L23/522 ,  G11C7/18 ,  G11C8/14

    Abstract: A semiconductor memory device with improved reliability and a related method are provided. The semiconductor memory device includes a mold structure including a plurality of gate electrodes and a plurality of mold insulating films on a first substrate, a channel structure penetrating the mold structure and crossing a respective level of each of the gate electrodes, a plurality of first insulating patterns in the mold structure, the first insulating patterns including a material different from that of the mold insulating films, and a first through via in the first insulating patterns, the first through via penetrating the first substrate and the mold structure. The gate electrodes include a first word line and a second word line on the first word line. A first distance from the first word line to the first through via is different from a second distance from the second word line to the first through via.

    Three-dimensional semiconductor device having a memory block and separation structures
    8.
    发明授权
    Three-dimensional semiconductor device having a memory block and separation structures 有权

    公开(公告)号：US10978465B2

    公开(公告)日：2021-04-13

    申请号：US16227985

    申请日：2018-12-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Byoung Il Lee ,  Yu Jin Seo ,  Jun Eon Jin

    IPC: H01L27/11565 ,  H01L27/11524 ,  H01L27/11556 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11519

    Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.

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