公开(公告)号：US08901643B2

公开(公告)日：2014-12-02

申请号：US13796394

申请日：2013-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bi-o Kim ,  Jin-tae Noh ,  Chang-woo Sun ,  Jae-young Ahn ,  Seung-hyun Lim ,  Ki-hyun Hwang

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/115 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/66666 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/42332 ,  H01L29/7827

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。

公开(公告)号：US09343546B2

公开(公告)日：2016-05-17

申请号：US14505571

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bi-o Kim ,  Jin-tae Noh ,  Chang-woo Sun ,  Jae-young Ahn ,  Seung-hyun Lim ,  Ki-hyun Hwang

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L27/115

CPC classification number: H01L29/66666 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/42332 ,  H01L29/7827

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。

公开(公告)号：US20150056797A1

公开(公告)日：2015-02-26

申请号：US14505571

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bi-o Kim ,  Jin-tae Noh ,  Chang-woo Sun ,  Jae-young Ahn ,  Seung-hyun Lim ,  Ki-hyun Hwang

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/42332 ,  H01L29/7827

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。