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公开(公告)号：US08901643B2
公开(公告)日：2014-12-02
申请号：US13796394
申请日：2013-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bi-o Kim , Jin-tae Noh , Chang-woo Sun , Jae-young Ahn , Seung-hyun Lim , Ki-hyun Hwang
IPC: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/115 , H01L29/78 , H01L29/423
CPC classification number: H01L29/66666 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L29/42332 , H01L29/7827
Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.
Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。
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2.发明申请公开(公告)号：US20150237253A1
公开(公告)日：2015-08-20
申请号：US14582614
申请日：2014-12-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shuichi Shimokawa , Dong-min Kim , Sang-min Lee , Kwi-sung Yoo , Seung-hyun Lim , Woo-seok Choi , Beoung-ouk Min , Takafumi Usui
CPC classification number: H04N5/23212 , H04N5/3456 , H04N5/3575 , H04N5/369 , H04N5/3696 , H04N5/378 , H04N2101/00
Abstract: A solid-state image sensor of an electronic device includes a plurality of pixels arranged in a matrix form and having a plurality of phase difference pixel of the plurality of pixels. The plurality of phase difference pixels are arranged at locations of pixels that are commonly read out in a plurality of different skip readout modes.
Abstract translation: 电子设备的固态图像传感器包括以矩阵形式排列并具有多个像素的多个相位差像素的多个像素。 多个相位差像素被布置在通常以多个不同的跳过读出模式读出的像素的位置。
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公开(公告)号：US11140346B2
公开(公告)日：2021-10-05
申请号：US15718598
申请日：2017-09-28
Applicant: Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
Inventor： Youngcheol Chae , Sang-hyun Cho , Min-ho Kwon , Seung-hyun Lim , Woo-jin Jo
Abstract: An analog-to-digital converter configured to convert an analog signal into a digital signal includes a first converter configured to receive an input signal of an analog type, compare the input signal with a plurality of reference signals, select one of the plurality of reference signals based on the comparison, and output an upper bit that is a portion of the digital signal based on the selected reference signal, a second converter configured to perform an oversampling operation n times based on a residue signal indicating a difference between an upper analog signal corresponding to the upper bit value and the input signal and output an intermediate bit value of the digital signal corresponding to the first to n-th oversampling signals generated respectively during the oversampling operations performed n times, and a third converter configured to output a lower bit value of the digital signal corresponding to the n-th oversampling signal.
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Patent Agency Ranking
公开(公告)号：US20180109747A1
公开(公告)日：2018-04-19
申请号：US15718598
申请日：2017-09-28
Applicant: Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
Inventor： Youngcheol Chae , Sang-hyun Cho , Min-ho Kwon , Seung-hyun Lim , Woo-jin Jo
CPC classification number: H04N5/378 , H03M1/124 , H03M1/162 , H03M1/361 , H03M1/38 , H03M1/56 , H03M3/46 , H03M3/494 , H04N5/37455
Abstract: An analog-to-digital converter configured to convert an analog signal into a digital signal includes a first converter configured to receive an input signal of an analog type, compare the input signal with a plurality of reference signals, select one of the plurality of reference signals based on the comparison, and output an upper bit that is a portion of the digital signal based on the selected reference signal, a second converter configured to perform an oversampling operation n times based on a residue signal indicating a difference between an upper analog signal corresponding to the upper bit value and the input signal and output an intermediate bit value of the digital signal corresponding to the first to n-th oversampling signals generated respectively during the oversampling operations performed n times, and a third converter configured to output a lower bit value of the digital signal corresponding to the n-th oversampling signal.
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公开(公告)号：US20180205886A1
公开(公告)日：2018-07-19
申请号：US15684276
申请日：2017-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seon-ju Lee , Dae-hwa Paik , Seung-hyun Lim , Kyoung-min Koh , Min-ho Kwon , Jin-woo Kim
CPC classification number: H04N5/23245 , H04N5/343 , H04N5/345 , H04N5/3452 , H04N5/3698 , H04N5/378
Abstract: In some embodiments, a method of operating an image sensor supporting a low speed mode and a high speed mode includes: outputting a first set of output signals from a first pixel group to a first output line group by enabling, during a first period of the low speed mode, a first load circuit group connected to the first set of output signals; outputting a second set of output signals from a second pixel group to a second output line group by enabling, during a second period of the low speed mode different from the first period, a second load circuit group connected to the second set of output signals; and disabling the second load circuit group during at least a part of the first period.
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公开(公告)号：US09848116B2
公开(公告)日：2017-12-19
申请号：US14582614
申请日：2014-12-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shuichi Shimokawa , Dong-min Kim , Sang-min Lee , Kwi-sung Yoo , Seung-hyun Lim , Woo-seok Choi , Beoung-ouk Min , Takafumi Usui
IPC: H04N5/232 , H04N5/369 , H04N5/357 , H04N5/378 , H04N101/00
CPC classification number: H04N5/23212 , H04N5/3456 , H04N5/3575 , H04N5/369 , H04N5/3696 , H04N5/378 , H04N2101/00
Abstract: A solid-state image sensor of an electronic device includes a plurality of pixels arranged in a matrix form and having a plurality of phase difference pixel of the plurality of pixels. The plurality of phase difference pixels are arranged at locations of pixels that are commonly read out in a plurality of different skip readout modes.
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公开(公告)号：US09343546B2
公开(公告)日：2016-05-17
申请号：US14505571
申请日：2014-10-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Bi-o Kim , Jin-tae Noh , Chang-woo Sun , Jae-young Ahn , Seung-hyun Lim , Ki-hyun Hwang
IPC: H01L21/8238 , H01L29/66 , H01L29/78 , H01L29/423 , H01L27/115
CPC classification number: H01L29/66666 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L29/42332 , H01L29/7827
Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.
Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。
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公开(公告)号：US20150056797A1
公开(公告)日：2015-02-26
申请号：US14505571
申请日：2014-10-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Bi-o Kim , Jin-tae Noh , Chang-woo Sun , Jae-young Ahn , Seung-hyun Lim , Ki-hyun Hwang
IPC: H01L29/66
CPC classification number: H01L29/66666 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L29/42332 , H01L29/7827
Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.
Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。
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