公开(公告)号：US09798241B2

公开(公告)日：2017-10-24

申请号：US14983851

申请日：2015-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Kim ,  Dong-Gun Lee ,  Byoung-Hun Park ,  Byung-Gook Kim ,  Chan-Uk Jeon

IPC: C03C15/00 ,  G03F7/38 ,  H01L21/027 ,  G03F1/00 ,  H01L21/311 ,  H01L27/108 ,  H01L21/768

CPC classification number: G03F7/38 ,  G03F1/00 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10888

Abstract: A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.