公开(公告)号：US10048601B2

公开(公告)日：2018-08-14

申请号：US15160540

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Seung Han ,  Dong-Gun Lee ,  Dong-Hoon Chung

IPC: G06K9/32 ,  G03F7/20 ,  G03F1/84

Abstract: An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.

公开(公告)号：US08779403B2

公开(公告)日：2014-07-15

申请号：US14103381

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd. ,  Fine Semitech Corp.

Inventor： Dong-Gun Lee ,  Eok-Bong Kim ,  Jong-Ju Park ,  Seong-Sue Kim

IPC: G01J1/42

CPC classification number: H05G2/008 ,  H05G2/003

Abstract: An apparatus and a method for generating extreme ultra violet radiation are provided. The apparatus for generating extreme ultra violet radiation includes a light source, a first reflecting mirror on which source light emitted from the light source is incident, a second reflecting mirror on which first reflected light reflected by the first reflecting mirror is incident, a focus mirror on which second reflected light reflected by the second reflecting mirror is incident, the focus mirror reflecting third reflected light back to the second reflecting mirror, and a gas cell on which fourth reflected light reflected by the second reflecting mirror is incident.

Abstract translation: 提供了一种用于产生极紫外辐射的装置和方法。 用于产生极紫外线辐射的装置包括光源，从光源发射的光源入射的第一反射镜，由第一反射镜反射的第一反射光入射的第二反射镜，聚焦反射镜 在第二反射镜反射的第二反射光入射到其上的情况下，将第三反射光反射回第二反射镜的聚焦镜和由第二反射镜反射的第四反射光入射的气室。

公开(公告)号：US10964846B2

公开(公告)日：2021-03-30

申请号：US16394217

申请日：2019-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Gun Lee ,  Joo-Sung Kim ,  Jong-Uk Seo ,  Young-Jo Tak

IPC: H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L27/15 ,  H01L33/40 ,  H01L33/12 ,  H01L33/06

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.

公开(公告)号：US09892884B2

公开(公告)日：2018-02-13

申请号：US15157407

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rae-Won Yi ,  Byoung-Sup Ahn ,  Dong-Gun Lee ,  Su-Young Lee

IPC: H01J37/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/20

CPC classification number: H01J37/023 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/20285 ,  H01J2237/20292 ,  H01J2237/24578

Abstract: An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

公开(公告)号：US09658522B2

公开(公告)日：2017-05-23

申请号：US14814763

申请日：2015-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Kim ,  Dong-Wan Kim ,  Chang-Min Park ,  In-Sung Kim ,  Dong-Gun Lee

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

公开(公告)号：US09798241B2

公开(公告)日：2017-10-24

申请号：US14983851

申请日：2015-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Kim ,  Dong-Gun Lee ,  Byoung-Hun Park ,  Byung-Gook Kim ,  Chan-Uk Jeon

IPC: C03C15/00 ,  G03F7/38 ,  H01L21/027 ,  G03F1/00 ,  H01L21/311 ,  H01L27/108 ,  H01L21/768

CPC classification number: G03F7/38 ,  G03F1/00 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10888

Abstract: A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.