公开(公告)号：US09658522B2

公开(公告)日：2017-05-23

申请号：US14814763

申请日：2015-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Kim ,  Dong-Wan Kim ,  Chang-Min Park ,  In-Sung Kim ,  Dong-Gun Lee

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

公开(公告)号：US09798241B2

公开(公告)日：2017-10-24

申请号：US14983851

申请日：2015-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Kim ,  Dong-Gun Lee ,  Byoung-Hun Park ,  Byung-Gook Kim ,  Chan-Uk Jeon

IPC: C03C15/00 ,  G03F7/38 ,  H01L21/027 ,  G03F1/00 ,  H01L21/311 ,  H01L27/108 ,  H01L21/768

CPC classification number: G03F7/38 ,  G03F1/00 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10888

Abstract: A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.