公开(公告)号：US20130082907A1

公开(公告)日：2013-04-04

申请号：US13628645

申请日：2012-09-27

Applicant: Samsung Electronics Co., Ltd. ,  Korea University Research and Business Foundat

Inventor： In-Kuk YUN ,  Chang-Su Kim ,  Chul-Woo Lee ,  Won-Dong Jang ,  Seong-Min Seo ,  Jeong-Seok Lee ,  Jeong-Seok Choi ,  Yeong-Jun Koh

IPC: G09G3/20

CPC classification number: G06F3/0321 ,  B32B2457/202 ,  G02F1/133509 ,  G06F3/0412

Abstract: A display apparatus is provided that includes a plurality of color filters corresponding to subpixels forming pixels of the display apparatus, and a black matrix formed among the plurality of color filters. The plurality of color filters includes a pattern indicating an absolute location of each pixel of the display apparatus.

Abstract translation: 提供了一种显示装置，其包括对应于形成显示装置的像素的子像素的多个滤色器和形成在多个滤色器之间的黑矩阵。 多个滤色器包括指示显示装置的每个像素的绝对位置的图案。

公开(公告)号：US11108229B2

公开(公告)日：2021-08-31

申请号：US16038744

申请日：2018-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Pil Jang ,  Chang-Su Kim ,  Han-Gu Kim ,  Moon-Seok Yang ,  Kyoung-Ki Jeon

IPC: H02H9/04 ,  H01L27/02 ,  H01L29/872 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a transient-state detection circuit configured to generate a dynamic triggering signal based on a voltage change rate of a voltage on a first power rail; a voltage detection circuit configured to generate a static triggering signal based on the voltage on the first power rail; a trigger circuit configured to generate a discharge control signal based on the dynamic triggering signal and the static triggering signal; and a main discharge circuit configured to discharge an electric charge from the first power rail to a second power rail based on the discharge control signal.

公开(公告)号：US20130088425A1

公开(公告)日：2013-04-11

申请号：US13647754

申请日：2012-10-09

Applicant: Samsung Electronics Co., Ltd. ,  Korea University Research and Business Foundat

Inventor： In-Kuk YUN ,  Chang-Su Kim ,  Chul-Woo Lee ,  Won-Dong Jang ,  Po-Ra Kim ,  Se-Mi Park ,  Jeong-Seok Lee ,  Yeong-Jun Koh

IPC: G09G5/00

CPC classification number: G06F3/0321 ,  G06F3/0425

Abstract: An apparatus and method are provided for detecting an input position using display pattern recognition. The apparatus includes an effective pattern area extractor for receiving an image of a display screen captured by a camera and extracting an effective pattern area for pattern recognition from the captured image of the display screen; a pattern recognizer for detecting subpixels included in the effective pattern area and identifying a plurality of holes included in each of the subpixels; and a display coordinate calculator for detecting an input position based on points at which the plurality of holes included in the each of the subpixels are formed.

Abstract translation: 提供了一种用于使用显示模式识别来检测输入位置的装置和方法。 该装置包括：有效图案区域提取器，用于接收由相机拍摄的显示屏幕的图像，并从显示屏幕的拍摄图像中提取用于图案识别的有效图案区域; 用于检测包括在有效图案区域中的子像素并识别每个子像素中包括的多个孔的图案识别器; 以及显示坐标计算器，用于基于形成有每个子像素中包括的多个孔的点来检测输入位置。

公开(公告)号：US10372430B2

公开(公告)日：2019-08-06

申请号：US15867168

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-Yeon Chung ,  Han-Jun Kim ,  Jong-Won Lee ,  Chang-Su Kim ,  Seon-Yeong Heo ,  Jun-Mo Park ,  Jong-Hee Yoon

IPC: G06F9/44 ,  G06F8/41 ,  G06N20/00

Abstract: In a method of compiling an updated program having a plurality of updated functions that is updated from an original program having a plurality of original functions, it is determined whether a first original function corresponding to a first updated function exists, it is determined whether the first updated function is changed from the first original function, a first optimization combination for the first updated function is searched when the first original function does not exist or when the first updated function is changed from the first original function, a second optimization combination applied to the first original function is read from a configuration database storing optimization combinations for the original functions when the first original function exists and the first updated function is not changed from the first original function, and the updated program is compiled using the first optimization combination or the second optimization combination.

公开(公告)号：US10121776B2

公开(公告)日：2018-11-06

申请号：US15364890

申请日：2016-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Jun Song ,  Young-Min Kim ,  Chang-Su Kim ,  Han-Gu Kim

IPC: H01L29/78 ,  H01L27/02 ,  H01L29/866 ,  H01L23/535 ,  H01L29/786 ,  H01L27/12

Abstract: A film-type semiconductor package includes a semiconductor integrated circuit and a dummy metal pattern. The semiconductor integrated circuit is formed on a film and includes an electrostatic discharge (ESD) protection circuit. The dummy metal pattern is formed on the film and is electrically connected to the ESD protection circuit through a first wiring formed on the film.

公开(公告)号：US09093287B2

公开(公告)日：2015-07-28

申请号：US14082742

申请日：2013-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Min-Chang Ko ,  Chang-Su Kim ,  Kyoung-Ki Jeon

IPC: H01L29/66 ,  H01L27/06 ,  H01L21/8234 ,  H01L27/07 ,  H01L27/02 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/823418 ,  H01L27/0255 ,  H01L27/0705 ,  H01L29/8611 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/13034 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode.

Abstract translation: 提供一种制造二极管的方法。 N型阱区形成在N型外延层的第一上部。 P型漂移区形成在N型外延层的第二上部。 在N型阱区中形成N型掺杂区。 在P型漂移区域中形成P型掺杂区域。 在P型漂移区域中形成隔离结构。 隔离结构设置在P型掺杂区域和N型阱区域之间。 第一电极形成在N型外延层的一部分上。 N型外延层的部分配置在N型阱区域和P型漂移区域之间。 第一电极与隔离结构的一部分重叠。 形成连接结构以电耦合N型掺杂区域和第一电极。