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公开(公告)号：US10573389B2
公开(公告)日：2020-02-25
申请号：US16013988
申请日：2018-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan-Ha Kim , Suk-Eun Kang , Ji-Su Kim , Seung-Kyung Ro , Dong-Gi Lee , Yun-Jung Lee , Jin-Wook Lee , Hee-Won Lee , Joon-Suc Jang , Young-Ha Choi
Abstract: An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.
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公开(公告)号：US09799411B2
公开(公告)日：2017-10-24
申请号：US14705745
申请日：2015-05-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Cheol Hong , Young-Jin Cho , Dong-Gi Lee , Hee-Chang Cho
CPC classification number: G11C29/52 , G06F13/1684 , G11C5/04
Abstract: A memory module set includes a main integrated circuit (IC) for transmitting and receiving an electrical signal, a first group of memory modules including at least one memory module having a first pin unit connected to the main IC, and a second group of memory modules including at least one memory module having a second pin unit connected to the main IC. The groups of memory modules and the main IC are arrayed in a first direction on a substrate, and the second group of memory modules is offset with respect to the first group of memory modules in a second direction that is perpendicular to the first direction so as to have a position relative to the main IC in the second direction that is different from that of the first group of memory modules.
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