公开(公告)号：US20210397079A1

公开(公告)日：2021-12-23

申请号：US17464826

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US20240152046A1

公开(公告)日：2024-05-09

申请号：US18218246

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin LEE ,  Doogyu LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: G03F1/70 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F1/70 ,  G03F7/2004 ,  G03F7/70033 ,  G03F7/70558

Abstract: A method of controlling semiconductor process includes forming a plurality of sample overlay keys by irradiating a first dose of extreme ultraviolet (EUV) light to a first photoresist layer formed on at least one sample wafer; determining a sample correction parameter for correcting a sample overlay error measured from the plurality of sample overlay keys; updating the sample correction parameter based on a difference between the first dose and a second dose; forming a plurality of main overlay keys by irradiating a second dose of extreme ultraviolet light to a second photoresist layer formed on the sample wafer based on the updated sample correction parameter; determining the main correction parameter based on a main overlay error measured from the plurality of main overlay keys; and performing a photolithography process on a wafer different from the sample wafer based on the main correction parameter.

公开(公告)号：US20220179302A1

公开(公告)日：2022-06-09

申请号：US17392788

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjay KANG ,  Chorong PARK ,  Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE

IPC: G03F1/36 ,  G03F1/22

Abstract: Disclosed are an overlay correction method, a method of evaluating an overlay correction operation, and a method of fabricating a semiconductor device using the overlay correction method. The overlay correction method may include measuring an overlay between center lines of lower and upper patterns on a wafer, fitting each of components of the overlay with a polynomial function to obtain first fitting quantities, and summing the first fitting quantities to construct a correction model. The components of the overlay may include overlay components, which are respectively measured in two different directions parallel to a top surface of a reticle. The highest order of the polynomial function may be determined as an order, which minimizes a difference between the polynomial function and each of the components of the overlay or corresponds to an inflection point in a graph of the difference with respect to the highest order of the polynomial function.

公开(公告)号：US20210333701A1

公开(公告)日：2021-10-28

申请号：US16952844

申请日：2020-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.