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公开(公告)号：US09911381B2
公开(公告)日：2018-03-06
申请号：US14825670
申请日：2015-08-13
发明人： Nam Goo Cha , Young Soo Park , Sung Hyun Sim , Je Won Kim
IPC分类号： G09G3/32 , G09G3/3233 , H01L27/15
CPC分类号： G09G3/3233 , G09G2300/0426 , G09G2300/0452 , G09G2300/0852 , G09G2310/0297 , H01L27/156
摘要： There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.
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公开(公告)号：US09601665B2
公开(公告)日：2017-03-21
申请号：US14828004
申请日：2015-08-17
发明人： Sung Hyun Sim , Geon Wook Yoo , Mi Hyun Kim , Dong Hoon Lee , Jin Bock Lee , Je Won Kim , Hye Seok Noh , Dong Kuk Lee
CPC分类号： H01L33/24 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/38
摘要： A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
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公开(公告)号：US20170077348A1
公开(公告)日：2017-03-16
申请号：US15141222
申请日：2016-04-28
发明人： Wan Tae LIM , Yong II Kim , Nam Goo Cha , Sung Hyun Sim
IPC分类号： H01L33/14 , H01L33/12 , H01L33/00 , H01L33/40 , H01L33/46 , H01L33/62 , H01L33/06 , H01L33/32
CPC分类号： H01L33/14 , H01L33/44 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.
摘要翻译： 半导体发光器件包括在发光结构上包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构和磁性层。 磁性层可以具有平行于有源层的上表面的至少一个磁化方向。 磁性层可以产生平行于有源层的上表面的磁场。 磁性层可以包括可以具有不同磁化方向的多个结构。 多个磁性层可以包括在发光结构上。 磁性层可以在接触电极上。 磁性层可以与焊盘电极隔离。
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公开(公告)号：US11764336B2
公开(公告)日：2023-09-19
申请号：US17385193
申请日：2021-07-26
发明人： Sung Hyun Sim , Yong Il Kim , Ha Nul Yoo , Ji Hye Yeon , Jun Bu Youn , Ji Hoon Yun , Su Hyun Jo
CPC分类号： H01L33/504 , H01L33/54 , H01L33/60 , H01L33/62
摘要： A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.
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公开(公告)号：US10170666B2
公开(公告)日：2019-01-01
申请号：US15389808
申请日：2016-12-23
发明人： Nam Goo Cha , Yong Il Kim , Young Soo Park , Sung Hyun Sim , Hanul Yoo
IPC分类号： H01L33/08 , G09G3/20 , H01L33/38 , H01L33/50 , H01L33/58 , H01L25/075 , G09G3/32 , H01L33/46 , H01L33/62
摘要： An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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公开(公告)号：US20180175261A1
公开(公告)日：2018-06-21
申请号：US15617669
申请日：2017-06-08
发明人： Hanul Yoo , Yong ll Kim , Sung Hyun Sim , Wan Tae Lim , Hye Seok Noh , Ji Hye Yeon
IPC分类号： H01L33/58 , H01L33/06 , H01L33/32 , H01L33/22 , H01L33/12 , H01L33/50 , H01L33/40 , H01L33/00
CPC分类号： H01L33/405 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/46 , H01L33/501 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
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公开(公告)号：US09966369B2
公开(公告)日：2018-05-08
申请号：US15802493
申请日：2017-11-03
发明人： Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
CPC分类号： H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
摘要： A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US10700246B2
公开(公告)日：2020-06-30
申请号：US16299422
申请日：2019-03-12
发明人： Sung Hyun Sim , Yong Il Kim , Ha Nul Yoo , Ji Hye Yeon , Jun Bu Youn , Ji Hoon Yun , Su Hyun Jo
摘要： A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.
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公开(公告)号：US10573632B2
公开(公告)日：2020-02-25
申请号：US16185602
申请日：2018-11-09
发明人： Ji Hye Yeon , Su Hyun Jo , Sung Hyun Sim , Ha Nul Yoo , Yong Il Kim , Han Kyu Seong
摘要： A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.
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公开(公告)号：US10566382B2
公开(公告)日：2020-02-18
申请号：US15788933
申请日：2017-10-20
发明人： Ji Hye Yeon , Han Kyu Seong , Wan Tae Lim , Sung Hyun Sim , Hanul Yoo
摘要： A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
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