-
公开(公告)号：US10170666B2
公开(公告)日：2019-01-01
申请号：US15389808
申请日：2016-12-23
发明人： Nam Goo Cha , Yong Il Kim , Young Soo Park , Sung Hyun Sim , Hanul Yoo
IPC分类号： H01L33/08 , G09G3/20 , H01L33/38 , H01L33/50 , H01L33/58 , H01L25/075 , G09G3/32 , H01L33/46 , H01L33/62
摘要： An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
-
公开(公告)号：US20180175261A1
公开(公告)日：2018-06-21
申请号：US15617669
申请日：2017-06-08
发明人： Hanul Yoo , Yong ll Kim , Sung Hyun Sim , Wan Tae Lim , Hye Seok Noh , Ji Hye Yeon
IPC分类号： H01L33/58 , H01L33/06 , H01L33/32 , H01L33/22 , H01L33/12 , H01L33/50 , H01L33/40 , H01L33/00
CPC分类号： H01L33/405 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/46 , H01L33/501 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
-
公开(公告)号：US11302745B2
公开(公告)日：2022-04-12
申请号：US16901451
申请日：2020-06-15
发明人： Jihye Yeon , Hanul Yoo , Jihoon Yun , Suhyun Jo
IPC分类号： H01L27/15 , H01L33/50 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62 , H01L25/18 , H01L27/12 , H01L33/00 , H01L23/00
摘要： An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.
-
公开(公告)号：US10103301B2
公开(公告)日：2018-10-16
申请号：US15617669
申请日：2017-06-08
发明人： Hanul Yoo , Yong Il Kim , Sung Hyun Sim , Wan Tae Lim , Hye Seok Noh , Ji Hye Yeon
IPC分类号： H01L33/58 , H01L33/06 , H01L33/32 , H01L33/22 , H01L33/12 , H01L33/50 , H01L33/40 , H01L33/00 , F21K9/235 , F21V29/76 , F21K9/238 , F21K9/232
摘要： A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
-
公开(公告)号：US09954028B2
公开(公告)日：2018-04-24
申请号：US15449396
申请日：2017-03-03
发明人： Ji Hye Yeon , Sung Hyun Sim , Wan Tae Lim , Yong Il Kim , Hanul Yoo
CPC分类号： H01L27/156 , H01L33/50
摘要： A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
-
公开(公告)号：US20220139999A1
公开(公告)日：2022-05-05
申请号：US17374568
申请日：2021-07-13
发明人： Jihye YEON , Sammook Kang , Hankyu Seong , Jongin Yang , Hanul Yoo , Jihoon Yun
IPC分类号： H01L27/15 , G09G3/32 , H01L33/40 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/62
摘要： A display apparatus includes a circuit board including a driving circuit, and a pixel array including a plurality of pixels on the circuit board, each including a plurality of sub-pixels, and a light blocking partition between the plurality of sub-pixels. Each of the plurality of sub-pixels includes a lower light emitting diode (LED) cell configured to generate light of a first wavelength. A first sub-pixel includes a transparent resin structure on the first lower LED cell, a second sub-pixel includes an inter-cell insulating layer on the second lower LED cell and an upper LED cell having on the inter-cell insulating layer and configured to generate light of a second wavelength, and a third sub-pixel includes a wavelength conversion structure on the third lower LED cell and configured to convert light of the first wavelength into light of a third wavelength.
-
公开(公告)号：US10566382B2
公开(公告)日：2020-02-18
申请号：US15788933
申请日：2017-10-20
发明人： Ji Hye Yeon , Han Kyu Seong , Wan Tae Lim , Sung Hyun Sim , Hanul Yoo
摘要： A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
-
公开(公告)号：US10553641B2
公开(公告)日：2020-02-04
申请号：US15933967
申请日：2018-03-23
发明人： Ji Hye Yeon , Sung Hyun Sim , Wan Tae Lim , Yong Il Kim , Hanul Yoo
摘要： A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
-
公开(公告)号：US10326061B2
公开(公告)日：2019-06-18
申请号：US15486982
申请日：2017-04-13
发明人： Wan Tae Lim , Sung Hyun Sim , Hanul Yoo , Yong Il Kim , Hye Seok Noh , Ji Hye Yeon
摘要： A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
-
公开(公告)号：US11728371B2
公开(公告)日：2023-08-15
申请号：US17716492
申请日：2022-04-08
发明人： Jihye Yeon , Hanul Yoo , Jihoon Yun , Suhyun Jo
IPC分类号： H01L27/15 , H01L33/50 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62 , H01L25/18 , H01L33/00 , H01L27/12 , H01L23/00
CPC分类号： H01L27/156 , H01L24/08 , H01L24/89 , H01L25/18 , H01L27/124 , H01L27/1248 , H01L33/0075 , H01L33/32 , H01L33/382 , H01L33/46 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/08146 , H01L2224/08147 , H01L2224/80001 , H01L2933/0016 , H01L2933/0025 , H01L2933/0041 , H01L2933/0066
摘要： An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.031 秒)
