Semiconductor device and method of manufacturing the same
    2.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08962444B2

    公开(公告)日:2015-02-24

    申请号:US14053913

    申请日:2013-10-15

    Abstract: Methods of manufacturing a semiconductor device are provided. The method includes forming a poly-silicon layer doped with first p-type dopants on a substrate, etching the poly-silicon layer and the substrate to form a poly-silicon pattern and a trench, forming device isolation pattern covering a lower sidewall of the poly-silicon pattern in the trench, thermally treating the poly-silicon pattern in a gas including second p-type dopants, forming a dielectric layer and a conductive layer on the thermally treated poly-silicon pattern and the device isolation pattern, etching the conductive layer, the dielectric layer, and the thermally treated poly-silicon pattern to form a control gate, a dielectric pattern, and a floating gate respectively.

    Abstract translation: 提供制造半导体器件的方法。 该方法包括在衬底上形成掺杂有第一p型掺杂剂的多晶硅层,蚀刻多晶硅层和衬底以形成多晶硅图案和沟槽,从而形成覆盖层的下侧壁的器件隔离图案 沟槽中的多晶硅图案,在包括第二p型掺杂剂的气体中热处理多晶硅图案,在热处理的多晶硅图案和器件隔离图案上形成电介质层和导电层,蚀刻导电 层,电介质层和热处理的多晶硅图案,以分别形成控制栅极,电介质图案和浮置栅极。

    Apparatus for atomic layer deposition and method of forming thin film using the apparatus

    公开(公告)号:US11339473B2

    公开(公告)日:2022-05-24

    申请号:US16522372

    申请日:2019-07-25

    Abstract: An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

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