公开(公告)号：US20240363665A1

公开(公告)日：2024-10-31

申请号：US18384025

申请日：2023-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho JANG ,  Doowon KWON ,  Doyeon KIM ,  GwideokRyan LEE ,  Kyungtae LIM

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/08 ,  H01L27/14636 ,  H01L2224/08145

Abstract: A semiconductor device includes a first substrate having a first semiconductor layer with a first electronic element, a first insulation layer on the first semiconductor layer, a first conductive pad in the first insulation layer and exposed through a first side of the first substrate, and a first wire in the first insulation layer connected to the first semiconductor layer, and a second substrate attached to the first side of the first substrate and having a second semiconductor layer with a second electronic element, a second insulation layer on the second semiconductor layer, a second wire in the second insulation layer, a through via penetrating the second semiconductor layer and connected to the second wire, and a second conductive pad connecting the through via and the first conductive pad of the first substrate, at least a part of the second conductive pad being in the second semiconductor layer.

公开(公告)号：US20180301509A1

公开(公告)日：2018-10-18

申请号：US15787846

申请日：2017-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masaru ISHII ,  GwideokRyan LEE ,  Taeyon LEE

IPC: H01L27/30 ,  H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

公开(公告)号：US20180204874A1

公开(公告)日：2018-07-19

申请号：US15696132

申请日：2017-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min LEE ,  GwideokRyan LEE ,  SEOKJIN KWON ,  BEOMSUK LEE ,  TAEYON LEE ,  DONGMO IM

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H04N9/045 ,  H04N9/07 ,  H04N2209/042

Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.