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公开(公告)号:US20210335811A1
公开(公告)日:2021-10-28
申请号:US17143216
申请日:2021-01-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gi Yong CHUNG , Ho Jin KIM , Young-Jin KWON , Dong Seog EUN
IPC: H01L27/11582 , H01L27/11565 , H01L27/11573 , H01L27/11556 , H01L27/11519 , H01L27/11526 , G11C8/14
Abstract: A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.
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公开(公告)号:US20240130127A1
公开(公告)日:2024-04-18
申请号:US18450969
申请日:2023-08-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Beyong Hyun KOH , Ho Jin KIM , Geun Won LIM , Jung Ho LEE , Hyun Gun JANG
CPC classification number: H10B43/27 , G11C5/063 , G11C16/0483 , H01L23/5283 , H01L29/0847 , H10B43/10 , H10B43/35
Abstract: A semiconductor memory device comprises a substrate; a mold structure on the substrate; a plurality of channel structures extending in the mold structure; a source layer and a source sacrificial layer between the substrate and the mold structure, wherein the source sacrificial layer is spaced apart from the source layer; and a source support layer on the source layer and the source sacrificial layer, wherein the source support layer is between the source layer and the source sacrificial layer, wherein an upper surface of the source support layer includes first and second portions extending parallel to the substrate, and a third portion that connects the first and second portions, wherein a vertical distance from an upper surface of the source layer to the first portion is smaller than a vertical distance from an upper surface of the substrate to the second portion.
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公开(公告)号:US20230328989A1
公开(公告)日:2023-10-12
申请号:US18209983
申请日:2023-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gi Yong CHUNG , Ho Jin KIM , Young-Jin KWON , Dong Seog EUN
CPC classification number: H10B43/27 , G11C8/14 , H10B41/10 , H10B41/27 , H10B41/40 , H10B43/10 , H10B43/40
Abstract: A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.
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公开(公告)号:US20200294185A1
公开(公告)日:2020-09-17
申请号:US16889179
申请日:2020-06-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jong Kon BAE , Dong Hwy KIM , Dong Kyoon HAN , Yo Han LEE , Han Yu Ool KIM , Matheus Farias MIRANDA , Tae Sung KIM , Ho Jin KIM , Dong Hyun YEOM
IPC: G06T1/60 , G06F1/3234 , G09G3/3275 , G09G3/20 , G09G5/36 , G06F1/16
Abstract: An electronic device includes a display, a processor generating image data, a graphic random access memory (GRAM) storing the image data, and a display driver integrated circuit for driving the display. The display driver integrated circuit is configured to select a part of the image data and to output the selected part to a specified area of the display.
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公开(公告)号:US20180204303A1
公开(公告)日:2018-07-19
申请号:US15743899
申请日:2016-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jong Kon BAE , Dong Hwy KIM , Dong Kyoon HAN , Yo Han LEE , Han Yu Ool KIM , Matheus Farias MIRANDA , Tae Sung KIM , Ho Jin KIM , Dong Hyun YEOM
IPC: G06T1/60
Abstract: An electronic device includes a display, a processor generating image data, a graphic random access memory (GRAM) storing the image data, and a display driver integrated circuit for driving the display. The display driver integrated circuit is configured to select a part of the image data and to output the selected part to a specified area of the display.
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