公开(公告)号：US20190241844A1

公开(公告)日：2019-08-08

申请号：US16250069

申请日：2019-01-17

Applicant: Samsung Electronics Co., Ltd. ,  SEMES Co., Ltd.

Inventor： Mi Hyun PARK ,  Jung-Min OH ,  Young-Hoo KIM ,  Hyo San LEE ,  Tae Keun KIM ,  Ye Rim YEON ,  Hae Rim OH ,  Ji Soo JEONG ,  Min Hee CHO

IPC: C11D11/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/10 ,  C11D17/00 ,  C11D1/14 ,  C11D3/20 ,  C11D3/34 ,  C11D3/32 ,  C11D3/28

CPC classification number: C11D11/0047 ,  B08B3/10 ,  C11D1/146 ,  C11D3/201 ,  C11D3/2017 ,  C11D3/2044 ,  C11D3/2096 ,  C11D3/28 ,  C11D3/32 ,  C11D3/3445 ,  C11D17/0008 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/68764

Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.035.

公开(公告)号：US20220320317A1

公开(公告)日：2022-10-06

申请号：US17693532

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Ju YEOM ,  Chang Su JEON ,  Jung Min OH ,  Sang Won BAE ,  Jae Sung LEE ,  Hyo San LEE ,  Jung Hun LIM

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.

公开(公告)号：US20220267673A1

公开(公告)日：2022-08-25

申请号：US17573734

申请日：2022-01-12

Applicant: Samsung Electronics Co., Ltd. ,  DONGWOO FINE-CHEM CO., LTD.

Inventor： Min Hyung CHO ,  Hyo Joong YOON ,  Min Ju IM ,  Jung Min OH ,  Sang Won BAE ,  Hyo San LEE

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/768

Abstract: Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.