公开(公告)号：US11095121B2

公开(公告)日：2021-08-17

申请号：US16432962

申请日：2019-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Ho Jeon ,  Jin-Hee Park ,  Hyuck-Joon Kwon

IPC: H02H9/04 ,  H03K3/3565 ,  H02H1/00

Abstract: An electrostatic protection circuit with variable Schmitt trigger characteristics is provided. The electrostatic protection circuit uses a Schmitt trigger circuit to protect an integrated circuit against an overvoltage. The Schmitt trigger circuit includes first and second branches bridged between a power supply rail and a ground rail. The Schmitt trigger circuit operates with a narrow hysteresis width when the second branch is connected in parallel to the first branch and with a wide hysteresis width when the second branch is not connected in parallel to the first branch. The electrostatic protection circuit discharges an overvoltage of the power supply rail using a narrow hysteresis width when a weak overvoltage is applied to the power supply rail, and discharges an overvoltage of the power supply rail using a wide hysteresis width when a strong overvoltage is applied to the power supply rail.

公开(公告)号：US10755765B2

公开(公告)日：2020-08-25

申请号：US16116079

申请日：2018-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bok-Yeon Won ,  Hyuck-Joon Kwon

IPC: G11C11/34 ,  G11C11/4091 ,  G11C7/08 ,  G11C7/18 ,  G11C8/14 ,  G11C11/408 ,  G11C11/4097 ,  G11C5/02 ,  G11C7/02 ,  G11C11/4094

Abstract: A layout structure of a bit line sense amplifier in a semiconductor memory device includes a first bit line sense amplifier which is connected to a first bit line and a first complementary bit line, and is controlled via a first control line and a second control line. The first control line is connected to a first node of the first bit line sense amplifier and the second control line is connected to a second node of the first bit line sense amplifier, and the first bit line sense amplifier includes at least one pair of transistors configured to share any one of a first active region corresponding to the first node and a second active region corresponding to the second node.

公开(公告)号：US10748846B2

公开(公告)日：2020-08-18

申请号：US16582706

申请日：2019-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Jung-Ha Oh ,  Hyuck-Joon Kwon ,  Jong-Hyuk Kim ,  Jong-Moon Yoon

IPC: H01L23/522 ,  H01L23/14 ,  H01L23/482 ,  H01L23/532 ,  H01L23/485 ,  H01L49/02 ,  H01L23/00 ,  H01L23/58

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

公开(公告)号：US10438886B2

公开(公告)日：2019-10-08

申请号：US15674878

申请日：2017-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Jung-Ha Oh ,  Hyuck-Joon Kwon ,  Jong-Hyuk Kim ,  Jong-Moon Yoon

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/485 ,  H01L23/58 ,  H01L23/482 ,  H01L23/14 ,  H01L23/532

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least-one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.