公开(公告)号：US09806080B2

公开(公告)日：2017-10-31

申请号：US14731764

申请日：2015-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Sik Yoo ,  Hyuk-Joon Kwon ,  Jung-Ha Oh ,  Jun-Ho Kim

IPC: H01L27/108 ,  H01L29/94 ,  G11C11/56 ,  G11C29/52 ,  H01L23/528 ,  H01L49/02 ,  G11C16/04 ,  G06F11/10 ,  G11C29/42 ,  G11C29/04 ,  H01L27/11582

CPC classification number: H01L27/10823 ,  G06F11/1048 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0466 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, a memory structure and a capacitor structure including at least one array of capacitors. The memory structure is disposed in a first region of the device. The capacitor structure is disposed in a second region of the device. The capacitor structure may include a first capacitor array, a second capacitor array, a third capacitor array and a first landing pad. The first landing pad is disposed between the substrate and lower electrodes of capacitors of the first and second capacitor arrays, and contacts the lower electrodes so as to electrically connect the first capacitor array and the second capacitor array. Upper electrodes of capacitors of the second and third capacitor arrays are integral such that the second capacitor array and the third capacitor array are electrically connected to each other.

公开(公告)号：US10748846B2

公开(公告)日：2020-08-18

申请号：US16582706

申请日：2019-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Jung-Ha Oh ,  Hyuck-Joon Kwon ,  Jong-Hyuk Kim ,  Jong-Moon Yoon

IPC: H01L23/522 ,  H01L23/14 ,  H01L23/482 ,  H01L23/532 ,  H01L23/485 ,  H01L49/02 ,  H01L23/00 ,  H01L23/58

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

公开(公告)号：US10438886B2

公开(公告)日：2019-10-08

申请号：US15674878

申请日：2017-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Jung-Ha Oh ,  Hyuck-Joon Kwon ,  Jong-Hyuk Kim ,  Jong-Moon Yoon

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/485 ,  H01L23/58 ,  H01L23/482 ,  H01L23/14 ,  H01L23/532

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least-one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.