Memory device supporting a high-efficient input/output interface and a memory system including the memory device

    公开(公告)号:US11461251B2

    公开(公告)日:2022-10-04

    申请号:US17326513

    申请日:2021-05-21

    IPC分类号: G06F13/16 H04L25/49

    摘要: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.

    PROBE DEVICE, TEST DEVICE, AND TEST METHOD FOR SEMICONDUCTOR DEVICE

    公开(公告)号:US20220091158A1

    公开(公告)日:2022-03-24

    申请号:US17308974

    申请日:2021-05-05

    IPC分类号: G01R1/20 G01R1/067 G01R31/26

    摘要: A probe device includes a first receiving terminal configured to receive a multi-level signal having M levels, where M is a natural number greater than 2; a second receiving terminal configured to receive a reference signal; a receiving buffer including a first input terminal connected to the first receiving terminal, a second input terminal connected to the second receiving terminal, and an output terminal configured to output the multi-level signal based on signals received from the first and second input terminals; and a resistor circuit comprising a plurality of resistors connected to the first and second receiving terminals and determining a magnitude of a termination resistance of the first and second receiving terminals.

    TRANSMITTERS FOR GENERATING MULTI-LEVEL SIGNALS AND MEMORY SYSTEM INCLUDING THE SAME

    公开(公告)号:US20220075725A1

    公开(公告)日:2022-03-10

    申请号:US17320460

    申请日:2021-05-14

    摘要: A multi-level signal transmitter includes a voltage selection circuit, which is configured to select one amongst a plurality of driving voltages, which have different voltage levels, in response to input data including at least two bits of data therein. A driver circuit is also provided, which is configured to generate an output data signal as a multi-level signal, in response to the selected one of the plurality of driving voltages. This selected signal is provided as a body bias voltage to at least one transistor within the driver circuit. This driver circuit may include a totem-pole arrangement of first and second MOS transistors having respective first and second body bias regions therein, and at least one of the first and second body bias regions may be responsive to the selected one of the plurality of driving voltages.