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公开(公告)号：US11594267B2
公开(公告)日：2023-02-28
申请号：US17230403
申请日：2021-04-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mingyu Lee , Jaewoo Park , Younghoon Son , Youngdon Choi , Hyungmin Jin , Junghwan Choi
Abstract: A method of operating a memory device including receiving a multilevel signal having M levels transmitted by an external controller through a clock receiving pin, where M is a natural number greater than 2, and decoding the multilevel signal to restore at least one of Data Bus Inversion (DBI) data, Data Mask (DM) data, Cyclic Redundancy Check (CRC) data, or Error Correction Code (ECC) data may be provided. The multilevel signal is a clock signal transmitted by the external controller, and is a signal swinging based on an intermediate reference signal that is an intermediate value between a minimum level and a maximum level among the M levels.
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公开(公告)号：US11789879B2
公开(公告)日：2023-10-17
申请号：US17903240
申请日：2022-09-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G06F13/1668 , H04L25/4917
Abstract: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.
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公开(公告)号：US11461251B2
公开(公告)日：2022-10-04
申请号：US17326513
申请日：2021-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
Abstract: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.
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公开(公告)号：US11693030B2
公开(公告)日：2023-07-04
申请号：US17308974
申请日：2021-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G01R1/203 , G01R1/06766 , G01R31/2601
Abstract: A probe device includes a first receiving terminal configured to receive a multi-level signal having M levels, where M is a natural number greater than 2; a second receiving terminal configured to receive a reference signal; a receiving buffer including a first input terminal connected to the first receiving terminal, a second input terminal connected to the second receiving terminal, and an output terminal configured to output the multi-level signal based on signals received from the first and second input terminals; and a resistor circuit comprising a plurality of resistors connected to the first and second receiving terminals and determining a magnitude of a termination resistance of the first and second receiving terminals.
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公开(公告)号：US20220075725A1
公开(公告)日：2022-03-10
申请号：US17320460
申请日：2021-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
IPC: G06F12/0802 , G11C7/10 , H03K19/00 , G11C8/06 , H03K19/0185
Abstract: A multi-level signal transmitter includes a voltage selection circuit, which is configured to select one amongst a plurality of driving voltages, which have different voltage levels, in response to input data including at least two bits of data therein. A driver circuit is also provided, which is configured to generate an output data signal as a multi-level signal, in response to the selected one of the plurality of driving voltages. This selected signal is provided as a body bias voltage to at least one transistor within the driver circuit. This driver circuit may include a totem-pole arrangement of first and second MOS transistors having respective first and second body bias regions therein, and at least one of the first and second body bias regions may be responsive to the selected one of the plurality of driving voltages.
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Patent Agency Ranking
公开(公告)号：US12061561B2
公开(公告)日：2024-08-13
申请号：US18242034
申请日：2023-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G06F13/1668 , H04L25/4917
Abstract: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.
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公开(公告)号：US11581960B2
公开(公告)日：2023-02-14
申请号：US17366329
申请日：2021-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungmin Jin , Younghoon Son , Hyunyoon Cho , Youngdon Choi , Junghwan Choi
Abstract: A translation device, a test system, and a memory system are provided. The translation device includes plural first input/output (I/O) circuits that respectively transmit and receive first signals through plural pins based on a pulse amplitude modulation (PAM)-M mode, a second I/O circuit that transmits and receives a second signal through one or more pins based on a PAM-N mode, and a translation circuit that translates the first signals into the second signal and translates the second signal into the first signals. M and N are different integers of 2 or more.
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公开(公告)号：US11870504B2
公开(公告)日：2024-01-09
申请号：US18096657
申请日：2023-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungmin Jin , Younghoon Son , Hyunyoon Cho , Youngdon Choi , Junghwan Choi
CPC classification number: H04B17/19 , H04B17/0085 , H04B17/18 , H04L7/0016
Abstract: A translation device, a test system, and a memory system are provided. The translation device includes plural first input/output (I/O) circuits that respectively transmit and receive first signals through plural pins based on a pulse amplitude modulation (PAM)-M mode, a second I/O circuit that transmits and receives a second signal through one or more pins based on a PAM-N mode, and a translation circuit that translates the first signals into the second signal and translates the second signal into the first signals. M and N are different integers of 2 or more.
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公开(公告)号：US11669448B2
公开(公告)日：2023-06-06
申请号：US17320460
申请日：2021-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
IPC: G06F12/0802 , G11C7/10 , G11C8/06 , H03K19/00 , H03K19/0185
CPC classification number: G06F12/0802 , G11C7/1048 , G11C8/06 , H03K19/0027 , H03K19/018521
Abstract: A multi-level signal transmitter includes a voltage selection circuit, which is configured to select one amongst a plurality of driving voltages, which have different voltage levels, in response to input data including at least two bits of data therein. A driver circuit is also provided, which is configured to generate an output data signal as a multi-level signal, in response to the selected one of the plurality of driving voltages. This selected signal is provided as a body bias voltage to at least one transistor within the driver circuit. This driver circuit may include a totem-pole arrangement of first and second MOS transistors having respective first and second body bias regions therein, and at least one of the first and second body bias regions may be responsive to the selected one of the plurality of driving voltages.
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公开(公告)号：US20220091158A1
公开(公告)日：2022-03-24
申请号：US17308974
申请日：2021-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
Abstract: A probe device includes a first receiving terminal configured to receive a multi-level signal having M levels, where M is a natural number greater than 2; a second receiving terminal configured to receive a reference signal; a receiving buffer including a first input terminal connected to the first receiving terminal, a second input terminal connected to the second receiving terminal, and an output terminal configured to output the multi-level signal based on signals received from the first and second input terminals; and a resistor circuit comprising a plurality of resistors connected to the first and second receiving terminals and determining a magnitude of a termination resistance of the first and second receiving terminals.
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