SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220293421A1

    公开(公告)日:2022-09-15

    申请号:US17520634

    申请日:2021-11-06

    Abstract: Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns.

    REGULATOR CIRCUIT, AN ELECTRONIC DEVICE INCLUDING THE REGULATOR CIRCUIT, AND A PROCESSOR INCLUDING THE REGULATOR CIRCUIT

    公开(公告)号:US20220107675A1

    公开(公告)日:2022-04-07

    申请号:US17394520

    申请日:2021-08-05

    Abstract: An electronic device including: a regulator circuit configured to output a regulated voltage based on a reference voltage and a feedback voltage; and an oscillator configured to generate an output frequency signal based on a reference frequency signal and the regulated voltage output from the regulator circuit, wherein the regulator circuit includes: a feedback loop configured to output the regulated voltage based on a difference between the reference voltage and the feedback voltage; a first capacitor; a precharge circuit connected to the feedback loop, and configured to charge the first capacitor with a second voltage which is based on a first voltage; a first switch configured to connect the precharge circuit with the first capacitor; and a second switch configured to connect the first capacitor with the feedback loop.

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