公开(公告)号：US20210110860A1

公开(公告)日：2021-04-15

申请号：US16842891

申请日：2020-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWOO JEONG ,  BYONGMO MOON

IPC: G11C11/4074 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C29/12

Abstract: A memory device includes a memory cell array including a plurality of memory cells storing data, a sense amplifier connected to the memory cell array, and a voltage controller. The voltage controller includes a voltage driver that generates a control signal and an overdrive controller that generates an overdrive control signal that regulates the generating of the control signal in response to at least one of a result of a comparison between the control signal and a reference voltage, and process, voltage, temperature (PVT) information. The voltage driver adjusts the control signal in response to the overdrive control signal to generate an overdriven control signal and outputs the overdriven control signal to the sense amplifier.

公开(公告)号：US20190035849A1

公开(公告)日：2019-01-31

申请号：US15660681

申请日：2017-07-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWOO JEONG ,  Stuart S.P. Parkin ,  Mahesh G. Samant

IPC: H01L27/22 ,  H01F10/16 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  C22C21/00 ,  C22C22/00 ,  B32B15/04

CPC classification number: H01L27/222 ,  B32B15/04 ,  B32B2457/00 ,  C22C21/00 ,  C22C22/00 ,  C22C2202/02 ,  G11C11/161 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.

公开(公告)号：US20230116592A1

公开(公告)日：2023-04-13

申请号：US17450691

申请日：2021-10-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

Inventor： MAHESH SAMANT ,  PANAGIOTIS CHARILAOS FILIPPOU ,  YARI FERRANTE ,  CHIRAG GARG ,  JAEWOO JEONG ,  . IKHTIAR

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: A device is provided. The device includes a multi-layered structure that is non-magnetic at room temperature, the multi-layered structure comprising alternating layers of Co and E, wherein E comprises at least one other element selected from the group consisting of Ge, Ga, Sn and Al, wherein a composition of the multi-layered structure is represented by Co1−xEx, with x being in a range from 0.42 to 0.55. The device also includes a combined layer provided in contact with the multi-layered structure, the combined layer including an insertion layer comprising Co or Fe or Mn or Al in contact with a Heusler compound.