公开(公告)号：US20140103371A1

公开(公告)日：2014-04-17

申请号：US14137885

申请日：2013-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-mi MOON ,  Young-hee SONG ,  Ill-heung CHOI ,  Jeong-wook LEE ,  Young-jin LEE

IPC: H01L25/075

CPC classification number: H01L25/075 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Lead frames for light emitting device packages, light emitting device packages, and illumination apparatuses employing the light emitting device packages. The lead frame including a plurality of mounting portions on which a plurality of light emitting device chips are mounted; a plurality of connection portions for circuit connecting the plurality of light emitting device chips; a terminal portion extended from the plurality of connection portions. The light emitting device package is formed by directly mounting the plurality of light emitting device chips on the lead frame and packaging the mounted light emitting device chips on the lead frame. The lead frame includes a plurality of connection portions for circuit connecting the plurality of light emitting device chips and a terminal portion in which a part of a circuit thereof is exposed.

Abstract translation: 用于发光器件封装的引线框架，发光器件封装以及采用发光器件封装的照明设备。 所述引线框架包括多个安装部分，所述多个安装部分安装有多个发光器件芯片; 用于电路连接多个发光器件芯片的多个连接部分; 从所述多个连接部分延伸的端子部分。 发光器件封装通过将多个发光器件芯片直接安装在引线框架上并将安装的发光器件芯片封装在引线框架上而形成。 引线框架包括用于电路连接多个发光器件芯片的多个连接部分和其一部分电路暴露的端子部分。

公开(公告)号：US20180190863A1

公开(公告)日：2018-07-05

申请号：US15689220

申请日：2017-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-seok CHOI ,  Min-ho KIM ,  Jeong-wook LEE ,  Jai-won JEAN ,  Chul-min KIM ,  Jae-deok JEONG ,  Min-hwan KIM ,  Jang-mi KIM

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/02 ,  H01L27/15

CPC classification number: H01L33/14 ,  H01L27/15 ,  H01L33/025 ,  H01L33/06 ,  H01L33/305 ,  H01L33/32

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.