公开(公告)号：US20140316164A1

公开(公告)日：2014-10-23

申请号：US14319554

申请日：2014-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youn-Joung CHO ,  Senji WADA ,  Jung-Sik CHOI ,  Jin-Seo LEE ,  Atsushi SAKURAI ,  Kyoo-Chul CHO ,  Atsuya YOSHINAKA ,  Haruyoshi SATO ,  Junji UEYAMA ,  Tomoharu YOSHINO ,  Masako SHIMIZU

IPC: C07F3/00

CPC classification number: C07F3/003 ,  C07C249/02 ,  C07C251/08 ,  C23C16/18

Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.

公开(公告)号：US20140309456A1

公开(公告)日：2014-10-16

申请号：US14317102

申请日：2014-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Joung CHO ,  Senji WADA ,  Jung-Sik CHOI ,  Jin-Seo LEE ,  Atsushi SAKURAI ,  Kyoo-Chul CHO ,  Atsuya YOSHINAKA ,  Haruyoshi SATO ,  Junji UEYAMA ,  Tomoharu YOSHINO ,  Masako SHIMIZU

IPC: C07C251/08

CPC classification number: C07F3/003 ,  C07C249/02 ,  C07C251/08 ,  C23C16/18

Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.

Abstract translation: 酮亚胺配体由下式1表示：其中R 1和R 2各自独立地为C 1 -C 5烷基。 金属络合物包括β-酮亚胺配体。 提供了形成β-酮亚胺配体的方法以及使用包括β-酮亚胺配体的金属络合物形成薄膜的方法。

公开(公告)号：US20190292207A1

公开(公告)日：2019-09-26

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Haruyoshi SATO ,  Naoki YAMADA ,  Hiroyuki UCHIUZOU

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US20190152996A1

公开(公告)日：2019-05-23

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Kazuki HARANO ,  Haruyoshi SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US20240067663A1

公开(公告)日：2024-02-29

申请号：US18231339

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Seungmin RYU ,  Gyuhee PARK ,  Younjoung CHO ,  Atsushi YAMASHITA

IPC: C07F5/00 ,  C01F17/218 ,  H01L21/02

CPC classification number: C07F5/003 ,  C01F17/218 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  C23C16/405

Abstract: An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):

公开(公告)号：US20230040334A1

公开(公告)日：2023-02-09

申请号：US17859214

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Younsoo KIM ,  Seungmin RYU ,  Atsushi YAMASHITA ,  Gyuhee PARK ,  Younjoung CHO

IPC: C07F17/00 ,  C23C16/40

Abstract: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

公开(公告)号：US20210300955A1

公开(公告)日：2021-09-30

申请号：US17072096

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhee PARK ,  Younjoung CHO ,  Haruyoshi SATO ,  Kazuki HARANO ,  Hiroyuki UCHIUZOU

IPC: C07F11/00 ,  C01G39/02 ,  C01B21/06 ,  C23C16/40 ,  C23C16/34

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):