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公开(公告)号：US11711930B2
公开(公告)日：2023-07-25
申请号：US17306116
申请日：2021-05-03
发明人： Kyung Bae Park , Takkyun Ro , Kiyohiko Tsutsumi , Chul Joon Heo , Yong Wan Jin
IPC分类号： H01L27/146 , H10K30/10 , H10K39/32 , H10K30/81 , H10K85/20 , H10K85/60 , H10K30/30 , H10K30/57 , H10K102/10
CPC分类号： H10K30/10 , H01L27/14647 , H01L27/14665 , H10K30/81 , H10K39/32 , H10K85/211 , H10K85/636 , H10K85/657 , H01L27/14621 , H10K30/30 , H10K30/57 , H10K85/633 , H10K85/652 , H10K85/6572 , H10K85/6576 , H10K2102/103
摘要： A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.
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公开(公告)号：US11997917B2
公开(公告)日：2024-05-28
申请号：US18128470
申请日：2023-03-30
发明人： Yusaku Konishi , Takahiro Fujiyama , Fumiaki Kato , Keigo Furuta , Kiyohiko Tsutsumi , Masashi Tsuji , Takao Motoyama
CPC分类号： H10K85/151 , H10K50/115 , H10K50/15 , H10K50/16
摘要： A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.
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公开(公告)号：US10998514B2
公开(公告)日：2021-05-04
申请号：US16178691
申请日：2018-11-02
发明人： Kyung Bae Park , Takkyun Ro , Kiyohiko Tsutsumi , Chul Joon Heo , Yong Wan Jin
IPC分类号： H01L27/146 , H01L51/00 , H01L51/42 , H01L27/30 , H01L51/44
摘要： A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.
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公开(公告)号：US10804327B2
公开(公告)日：2020-10-13
申请号：US16136584
申请日：2018-09-20
发明人： Kiyohiko Tsutsumi , Kyung Bae Park , Takkyun Ro , Chul Joon Heo , Yong Wan Jin
摘要： Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)−Ts2(10)(° C.)≥Tm1(° C.)−Ts1(10)(° C.) [Relationship Equation 1]
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公开(公告)号：US11997856B2
公开(公告)日：2024-05-28
申请号：US17306116
申请日：2021-05-03
发明人： Kyung Bae Park , Takkyun Ro , Kiyohiko Tsutsumi , Chul Joon Heo , Yong Wan Jin
IPC分类号： H01L27/146 , H10K30/10 , H10K30/81 , H10K39/32 , H10K85/20 , H10K85/60 , H10K30/30 , H10K30/57 , H10K102/10
CPC分类号： H10K30/10 , H01L27/14647 , H01L27/14665 , H10K30/81 , H10K39/32 , H10K85/211 , H10K85/636 , H10K85/657 , H01L27/14621 , H10K30/30 , H10K30/57 , H10K85/633 , H10K85/652 , H10K85/6572 , H10K85/6576 , H10K2102/103
摘要： A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.
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公开(公告)号：US11631815B2
公开(公告)日：2023-04-18
申请号：US16729646
申请日：2019-12-30
发明人： Yusaku Konishi , Takahiro Fujiyama , Fumiaki Kato , Keigo Furuta , Kiyohiko Tsutsumi , Masashi Tsuji , Takao Motoyama
摘要： A device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. A quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.
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公开(公告)号：US11456336B2
公开(公告)日：2022-09-27
申请号：US17022567
申请日：2020-09-16
发明人： Kiyohiko Tsutsumi , Kyung Bae Park , Takkyun Ro , Chul Joon Heo , Yong Wan Jin
摘要： Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)−Ts2(10)(° C.)≥Tm1(° C.)−Ts1(10)(° C.) [Relationship Equation 1]
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公开(公告)号：US11432774B2
公开(公告)日：2022-09-06
申请号：US16255981
申请日：2019-01-24
发明人： Chui Joon Heo , Kyung Bae Park , Dongseon Lee , Moon Gyu Han , Takkyun Ro , Youn Hee Lim , Yong Wan Jin , Kiyohiko Tsutsumi
IPC分类号： A61B5/00 , A61B5/1455 , H01L27/30 , A61B5/024 , A61B5/0205 , H01L51/42 , A61B5/02 , H01L27/146
摘要： A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.
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公开(公告)号：US20190239821A1
公开(公告)日：2019-08-08
申请号：US16255981
申请日：2019-01-24
发明人： Chul Joon HEO , Kyung Bae Park , Dongseon Lee , Moon Gyu Han , Takkyun Ro , Youn Hee Lim , Yong Wan Jin , Kiyohiko Tsutsumi
IPC分类号： A61B5/00 , A61B5/1455 , A61B5/0205
CPC分类号： A61B5/02416 , A61B5/02007 , A61B5/02427 , A61B5/14551 , A61B5/14552 , A61B5/6833 , A61B5/6898 , A61B2562/046 , A61B2576/00 , H01L27/14645 , H01L27/14669 , H01L27/307 , H01L51/42 , H01L51/4206
摘要： A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.
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