公开(公告)号：US09553009B2

公开(公告)日：2017-01-24

申请号：US14522937

申请日：2014-10-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae In Sim ,  Gyeong Seon Park ,  Kyung Ja Lim ,  Seung Woo Choi ,  O Hak Kwon

IPC分类号： B32B38/10 ,  H01L21/683 ,  B32B43/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/6838 ,  B32B43/006 ,  H01L21/67092 ,  H01L21/68735 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1132 ,  Y10T156/1153 ,  Y10T156/1168 ,  Y10T156/1911 ,  Y10T156/1944 ,  Y10T156/1978

摘要： There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

摘要翻译： 提供了一种用于从包括支撑衬底，半导体层和生长衬底的层压结构分离生长衬底的衬底分离装置和方法。 该装置包括：第一基座，其构造成在其上保持层压结构，并且包括第一保持单元，其构造成保持限定层压结构的底表面的支撑基板;以及加热单元，其构造成加热层叠结构; 以及第二基座，其包括设置在所述第一保持单元上方的第二保持单元，并且构造成保持限定所述层叠结构的上表面的所述生长基板。