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公开(公告)号：US20230280646A1
公开(公告)日：2023-09-07
申请号：US17972231
申请日：2022-10-24
发明人： Kyungsoo KIM , Sooryong LEE , Jaewon YANG , Sangchul YEO , Hyeok LEE
摘要： The inventive concept provides a corner rounding method of a deep learning-based optical proximity correction (OPC) pattern by which patterning reliability may be ensured, and an OPC method and a mask manufacturing including the corner rounding method. The corner rounding method of a deep learning-based OPC pattern includes: obtaining a contour of a photoresist (PR) pattern or an etching pattern on a wafer; obtaining a square layout of the PR pattern or the etching pattern corresponding to the contour; generating a transform model through deep learning with the square layout and the contour; and obtaining a rounded layout target with respect to a square layout target by using the transform model.
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公开(公告)号：US20230197460A1
公开(公告)日：2023-06-22
申请号：US18072998
申请日：2022-12-01
发明人： Jaewon YANG , Seongjin PARK , Sangchul YEO , Seonmin RHEE , Hyeok LEE , Sooryong LEE , Seungju HAN
IPC分类号： H01L21/308 , G06T3/40 , G06V10/46 , G06V10/82 , G03F7/20
CPC分类号： H01L21/308 , G03F7/70616 , G06T3/4007 , G06V10/46 , G06V10/82
摘要： A semiconductor device patterning method includes generating an input image by imaging information about a pattern of a sample, acquiring an output image of the pattern of the sample after a preset semiconductor process with respect to the sample, generating a predictive model through learning using a Deep Neural Network (DNN) with the input image and the output image, and predicting a pattern image after the semiconductor process for a pattern of a semiconductor device by using the predictive model.
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