公开(公告)号：US12094847B2

公开(公告)日：2024-09-17

申请号：US17329980

申请日：2021-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seyeong Seok ,  Un-Byoung Kang ,  Chungsun Lee

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18

CPC classification number: H01L24/16 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/17 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L25/18 ,  H01L2224/13005 ,  H01L2224/13024 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/73104 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/95001 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1035 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1443

Abstract: A semiconductor package may include: a first redistribution substrate; a first die above the first redistribution substrate; a second redistribution substrate on the first die; a first bump formed on the first die, and connecting the first die to the second redistribution substrate; a first molding portion enclosing the first die and surrounding the first bump; and an outer terminal on a bottom surface of the first redistribution substrate, wherein the second redistribution substrate comprises an insulating pattern and a conductive pattern in the insulating pattern to be in contact with the first bump, and wherein, at an interface of the second redistribution substrate and the first bump, the conductive pattern of the second redistribution substrate and the first bump are formed of the same material to form a single body or structure.

公开(公告)号：US20220157757A1

公开(公告)日：2022-05-19

申请号：US17329980

申请日：2021-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seyeong Seok ,  Un-Byoung Kang ,  Chungsun Lee

IPC: H01L23/00 ,  H01L25/10 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor package may include: a first redistribution substrate; a first die above the first redistribution substrate; a second redistribution substrate on the first die; a first bump formed on the first die, and connecting the first die to the second redistribution substrate; a first molding portion enclosing the first die and surrounding the first bump; and an outer terminal on a bottom surface of the first redistribution substrate, wherein the second redistribution substrate comprises an insulating pattern and a conductive pattern in the insulating pattern to be in contact with the first bump, and wherein, at an interface of the second redistribution substrate and the first bump, the conductive pattern of the second redistribution substrate and the first bump are formed of the same material to form a single body or structure.