公开(公告)号：US09685519B2

公开(公告)日：2017-06-20

申请号：US14728328

申请日：2015-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Ra Kim ,  Seung-Hwan Kim ,  Sung-Hee Lee ,  Dae-Sin Kim ,  Ji-Young Kim ,  Dong-Soo Woo

IPC: H01L29/66 ,  H01L21/332 ,  H01L29/423 ,  H01L29/78 ,  H01L27/108 ,  H01L21/762 ,  H01L29/40

CPC classification number: H01L29/4236 ,  H01L21/76229 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/407 ,  H01L29/7827 ,  H01L29/785

Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

公开(公告)号：US09082850B2

公开(公告)日：2015-07-14

申请号：US13959765

申请日：2013-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Ra Kim ,  Seung-Hwan Kim ,  Sung-Hee Lee ,  Dae-Sin Kim ,  Ji-Young Kim ,  Dong-Soo Woo

IPC: H01L29/66 ,  H01L29/78 ,  H01L27/108 ,  H01L29/423 ,  H01L21/762

CPC classification number: H01L29/4236 ,  H01L21/76229 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/407 ,  H01L29/7827 ,  H01L29/785

Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

Abstract translation: 半导体器件包括在衬底中的场区域以限定有源区域，栅极沟槽包括跨过有源区域设置的有源沟槽和场区域中的场沟槽，以及填充栅极沟槽并在第一方向上延伸的字线。 字线包括占据有源沟槽的有源栅电极和占据场沟的场栅电极。 设置在彼此相邻并且在其间具有一个字线的有源区之间的每个场栅电极的底表面被设置在比有源栅电极的底表面更高的电平。

公开(公告)号：US11032859B2

公开(公告)日：2021-06-08

申请号：US16163291

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd

Inventor： Hyun-Kee Min ,  Sung-Hee Lee ,  Tae-Hun Lim ,  Min-Whoa Hong ,  Sun-Key Lee ,  Doo-Suk Kang ,  Bo-Kun Choi

IPC: H04W76/14 ,  H04W64/00 ,  H04W16/14

Abstract: An electronic device may include a network interface, a wireless communication circuit configured to support directional communication, a processor electrically connected with the network interface and the wireless communication circuit, and a memory electrically connected with the processor. The memory may store instructions executed to enable the processor to form a first wireless communication channel with a first external electronic device using the wireless communication circuit, form a second wireless communication channel with a second external electronic device using the wireless communication circuit, determine information associated with positions of the first external electronic device and the second external electronic device, detect communication, via the electronic device, between the first external electronic device and the second external electronic device, and enable the first external electronic device and the second external electronic device to directly connect to each other in the frequency band at least partially based on the information.

公开(公告)号：US09918274B2

公开(公告)日：2018-03-13

申请号：US14862519

申请日：2015-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hee Lee ,  Ashish Gupta ,  Jun-Young Park

IPC: H04W52/02 ,  H04B7/04 ,  H04W40/34

CPC classification number: H04W52/0219 ,  H04B7/04 ,  H04W40/34 ,  H04W52/02 ,  Y02D70/00 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/1264 ,  Y02D70/142 ,  Y02D70/144 ,  Y02D70/162 ,  Y02D70/164 ,  Y02D70/166 ,  Y02D70/168 ,  Y02D70/22 ,  Y02D70/26

Abstract: Various embodiments of the present disclosure relate to a device and method for reducing current consumption in an electronic device. The electronic device may include a communication interface that transmits and receives a signal; and a processor that configures a multi-hop network with at least one other electronic device, and changes the transmission period of a message for a path management of the multi-hop network based on whether the multi-hop network configuration has been changed. Other embodiments are also possible.