公开(公告)号：US20230176470A1

公开(公告)日：2023-06-08

申请号：US17860139

申请日：2022-07-08

申请人： Samsung Electronics Co., Ltd.

发明人： Wooyong Cho ,  Useong Kim ,  Heejun Lee

IPC分类号： G03F1/36 ,  G06F30/398 ,  G03F7/20

CPC分类号： G03F1/36 ,  G06F30/398 ,  G03F7/70441

摘要： Disclosed is a method of generating a curvilinear sub-resolution assist feature (SRAF) capable of easily generating a curvilinear SRAF satisfying mask rule check (MRC) conditions, an MRC verification method for easy MRC verification of the curvilinear SRAF, and a mask manufacturing method including the method of generating the same. The method of generating a curvilinear SRAF includes generating a curve axis for generating the curvilinear SRAF corresponding to a main feature, generating curve points on a line of the curve axis, and generating the curvilinear SRAF based on the curve points.

公开(公告)号：US11747721B2

公开(公告)日：2023-09-05

申请号：US17154279

申请日：2021-01-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Useong Kim ,  Mincheol Kang ,  Woojoo Sim

IPC分类号： G03F7/20 ,  G06N3/08 ,  G03F1/36 ,  G03F7/00 ,  H01L21/027

CPC分类号： G03F1/36 ,  G03F7/70308 ,  G03F7/70441 ,  G06N3/08 ,  H01L21/027

摘要： Provided are a method of forming a mask, the method accurately and quickly restoring an image on the mask to the shape on the mask, and a mask manufacturing method using the method of forming the mask. The method of forming a mask includes obtaining first images by performing rasterization and image correction on shapes on the mask corresponding to first patterns on a wafer, obtaining second images by applying a transformation to the shapes on the mask, performing deep learning based on a transformation relationship between ones of the first images and ones of the second images corresponding to the first images, and forming a target shape on the mask corresponding to a target pattern on the wafer, based on the deep learning. The mask is manufactured based on the target shape on the mask.

公开(公告)号：US20240280891A1

公开(公告)日：2024-08-22

申请号：US18111785

申请日：2023-02-20

申请人： Samsung Electronics Co., Ltd.

发明人： Heejun Lee ,  Wooyong Cho ,  Bayram Yenikaya ,  Joobyoung Kim ,  Useong Kim

IPC分类号： G03F1/36 ,  G03F1/84

CPC分类号： G03F1/36 ,  G03F1/84

摘要： Provided are an optical proximity correction (OPC) method capable of addressing the limitations of patterning and improving the reliability of patterning, and a mask manufacturing method using the OPC method. In the OPC method, a rectangular mask layout for a target pattern is created, the edge of the rectangular mask layout is dissected into segments, a first shape variable point is created, and a second shape variable point is created by shifting the first shape variable point on a rounded target pattern. Thereafter, a curvilinear mask layout is created based on the second shape variable point, a contour is extracted based on the curvilinear mask layout, an edge placement error (EPE) is determined, and the operations are repeated according to a predetermined criterion, thereby realizing a mask layout with minimal EPEs.