公开(公告)号：US20130113005A1

公开(公告)日：2013-05-09

申请号：US13669179

申请日：2012-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Ho LEE ,  Seung Woo CHOI ,  Sang Yeob SONG ,  Jong Rak SOHN

IPC: H01L33/10

CPC classification number: H01L33/10 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/14 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在发光结构上形成反射结构，并且包括由多个纳米棒和多个纳米棒之间的空气填充空间以及形成在纳米棒层上的反射金属层组成的纳米棒层。

公开(公告)号：US20130307007A1

公开(公告)日：2013-11-21

申请号：US13896166

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Young CHOI ,  Jae Ho HAN ,  Ki Seok KIM ,  Wan Ho LEE ,  Myeong Ha KIM ,  Hae Soo HA

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/42

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract translation: 发光器件包括第一半导体层，有源层和第二半导体层，以及分别与第一和第二半导体层电连接的第一和第二电极。 第二电极包括反射焊盘部分，透明电极层，反射指状部分和电极焊盘部分。 反射焊盘部分设置在第二半导体层的上表面的区域中。 透明电极层设置在第二半导体层上，并且具有包围反射焊盘部分的开口，使得透明电极层不与反射焊盘部分接触。 反射指部从反射板部延伸，并且其至少一部分设置在透明电极层上。 电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。

公开(公告)号：US20160059472A1

公开(公告)日：2016-03-03

申请号：US14840788

申请日：2015-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wan Ho LEE ,  Jin Ho PARK ,  Han Jun LEE

IPC: B29C59/02

Abstract: Disclosed herein is an image forming apparatus. The image forming apparatus includes at least one pressing unit configured to bring the developing roller and the photoreceptor in contact with each other, an operating unit which is configured to be in an operating position during which a pressing force of the pressing unit is generated, and a standby during at which the pressing force is released, and a cover unit detachably provided to one side of the developing device and configured to guide movement of the operating unit to the operating position. By this configuration, operation of the operating unit is linked with an operation of detachment or attachment of the cover unit.

Abstract translation: 本文公开了一种图像形成装置。 图像形成装置包括至少一个按压单元，其构造成使显影辊和感光体彼此接触;操作单元，其构造成处于产生按压单元的按压力的操作位置;以及 待机期间，按压力被释放;以及盖单元，其可拆卸地设置在显影装置的一侧并被构造成将操作单元的运动引导到操作位置。 通过这种构造，操作单元的操作与盖单元的拆卸或附接的操作相关联。

公开(公告)号：US20130119423A1

公开(公告)日：2013-05-16

申请号：US13677072

申请日：2012-11-14

Applicant: Samsung Electronics Co., Ltd

Inventor： Wan Ho LEE ,  Gi Bum KIM ,  Si Hyuk LEE

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.

Abstract translation: 包含其的半导体发光器件和封装包括：包括第一导电型半导体层，有源层和第二导电类型半导体层的发光结构。 光提取层设置在发光结构上，并且包括具有透光性的透光薄膜层，包括设置在透光薄膜层上的纳米棒的纳米棒层和纳米线层，纳米线层包括 纳米线布置在纳米棒层上。