公开(公告)号：US20130307007A1

公开(公告)日：2013-11-21

申请号：US13896166

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Young CHOI ,  Jae Ho HAN ,  Ki Seok KIM ,  Wan Ho LEE ,  Myeong Ha KIM ,  Hae Soo HA

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/42

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract translation: 发光器件包括第一半导体层，有源层和第二半导体层，以及分别与第一和第二半导体层电连接的第一和第二电极。 第二电极包括反射焊盘部分，透明电极层，反射指状部分和电极焊盘部分。 反射焊盘部分设置在第二半导体层的上表面的区域中。 透明电极层设置在第二半导体层上，并且具有包围反射焊盘部分的开口，使得透明电极层不与反射焊盘部分接触。 反射指部从反射板部延伸，并且其至少一部分设置在透明电极层上。 电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。

公开(公告)号：US20160133788A1

公开(公告)日：2016-05-12

申请号：US14789278

申请日：2015-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun KIM ,  Myong Soo CHO ,  Yeon Ji KIM ,  Yong Seok KIM ,  Tae Kang KIM ,  Jae Ho HAN

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/54 ,  H01L33/50 ,  H01L33/46 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54

Abstract: Semiconductor light-emitting devices, and semiconductor light-emitting packages, include at least one light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a substrate, the at least one light-emitting structure having a first region and a second region delimiting the first region. The light-emitting device includes a groove in the second region, and the groove is adjacent to an edge of the substrate and extends parallel to the edge of the substrate.

Abstract translation: 半导体发光器件和半导体发光封装包括至少一个发光结构，其包括依次堆叠在衬底上的第一导电类型半导体层，有源层和第二导电类型半导体层， 至少一个发光结构具有第一区域和限定第一区域的第二区域。 发光装置包括在第二区域中的凹槽，并且凹槽与衬底的边缘相邻并且平行于衬底的边缘延伸。

公开(公告)号：US20150087096A1

公开(公告)日：2015-03-26

申请号：US14285102

申请日：2014-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Ho HAN ,  Myeong Ha KIM

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  F21K9/232 ,  F21K9/27 ,  F21K9/90 ,  F21S41/143 ,  F21S45/47 ,  F21Y2115/10 ,  H01L31/02366 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured.

Abstract translation: 对包括第一导电类型半导体层，有源层和第二导电类型半导体层的顺序堆叠的发光结构进行半导体发光器件的制造方法。 对第二导电型半导体层和有源层进行台面蚀刻，以使第一导电型半导体层的一部分透过。 在第二导电型半导体层上形成导电层，通过台面蚀刻形成第一导电型半导体层的部分。 接着，对导电层进行干蚀刻，使得第一导电型半导体层的上表面被部分地蚀刻以形成在其上的不平坦部分。 所得到的半导体发光器件在容易制造的同时具有改善的外部光提取效率。