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    METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    制造基于氮化镓的半导体发光器件的方法

    公开(公告)号：US20130302930A1

    公开(公告)日：2013-11-14

    申请号：US13887102

    申请日：2013-05-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： In Joon YEO ,  Hyun Young KIM ,  Sang Yeob SONG

    IPC: H01L33/00

    CPC classification number: H01L33/0075 ,  H01L33/32

    Abstract: A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device is provided. A light emitting structure is formed and includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed of a nitride semiconductor containing gallium (Ga) on a substrate. A metal layer is disposed on the p-type semiconductor layer, and a heat treatment is performed to form a gallium(Ga)-metal compound. The gallium(Ga)-metal compound formed on the p-type semiconductor layer is removed. An electrode is disposed on an upper surface of the p-type semiconductor layer from which the gallium(Ga)-metal compound has been removed. The forming of the gallium(Ga)-metal compound includes forming a gallium vacancy in a surface of the p-type semiconductor layer.

    Abstract translation: 提供一种制造基于氮化镓（GaN）的半导体发光器件的方法。 形成发光结构，并且包括由在基板上含有镓（Ga）的氮化物半导体形成的n型半导体层，有源层和p型半导体层。 金属层设置在p型半导体层上，进行热处理以形成镓（Ga） - 金属化合物。 除去形成在p型半导体层上的镓（Ga） - 金属化合物。 电极被设置在去除了镓（Ga） - 金属化合物的p型半导体层的上表面上。 镓（Ga） - 金属化合物的形成包括在p型半导体层的表面形成镓空位。

    METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE 审中-公开
    形成半导体器件的图案的方法

    公开(公告)号：US20150104944A1

    公开(公告)日：2015-04-16

    申请号：US14276502

    申请日：2014-05-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki Won PARK ,  Ju Hyun KIM ,  Yu Seung KIM ,  Sang Yeob SONG ,  Tae Hyun LEE

    IPC: H01L21/308

    CPC classification number: H01L21/0331 ,  H01L33/10 ,  H01L2933/0016

    Abstract: There is provided a method of forming patterns for a semiconductor device. The method sequentially forming a first mask layer and a second mask layer on a substrate. The method also includes forming a second mask pattern layer by patterning the second mask layer. The method further includes forming a first mask pattern layer having a negative slope portion, by etching the first mask layer exposed through the second mask pattern layer. The method also includes forming a thin film layer on the substrate exposed through the first mask pattern layer.

    Abstract translation: 提供了一种形成半导体器件的图案的方法。 该方法在衬底上依次形成第一掩模层和第二掩模层。 该方法还包括通过图案化第二掩模层来形成第二掩模图案层。 该方法还包括通过蚀刻通过第二掩模图案层暴露的第一掩模层来形成具有负斜率部分的第一掩模图案层。 该方法还包括在通过第一掩模图案层暴露的衬底上形成薄膜层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20160072004A1

    公开(公告)日：2016-03-10

    申请号：US14714117

    申请日：2015-05-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Yeob SONG ,  Ju Heon YOON ,  Gi Bum KIM ,  Hyun Young KIM ,  Jong Hoon HA

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/04

    CPC classification number: H01L33/40

    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.

    Abstract translation: 一种半导体发光器件包括：发光结构，包括第一导电类型半导体层，第二导电型半导体层和设置在其间的有源层; 设置在所述发光结构上以与所述第一导电型半导体层电连接的第一电极; 以及设置在所述发光结构上以电连接到所述第二导电类型半导体层的第二电极。 第二电极包括设置在第二导电类型半导体层上的第一层和设置在第一层上的第二层，其具有比第一层高的薄层电阻，并且其厚度小于第一层的厚度 。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20130113005A1

    公开(公告)日：2013-05-09

    申请号：US13669179

    申请日：2012-11-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wan Ho LEE ,  Seung Woo CHOI ,  Sang Yeob SONG ,  Jong Rak SOHN

    IPC: H01L33/10

    CPC classification number: H01L33/10 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/14 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.

    Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在发光结构上形成反射结构，并且包括由多个纳米棒和多个纳米棒之间的空气填充空间以及形成在纳米棒层上的反射金属层组成的纳米棒层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20130113006A1

    公开(公告)日：2013-05-09

    申请号：US13670129

    申请日：2012-11-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Hun KIM ,  Gi Bum KIM ,  Bum Joon KIM ,  Seung Wan CHAE ,  Su Hyun JO ,  Sang Yeob SONG

    IPC: H01L33/60

    CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405

    Abstract: A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has an impurity concentration higher than that of the first p-type semiconductor layer. The second p-type semiconductor layer is disposed on the first p-type semiconductor layer and has an uneven structure formed on a surface thereof. A reflective metal layer is formed on the second p-type semiconductor layer.

    Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的有源层和设置在有源层上的第一p型半导体层。 第一p型半导体层在其表面上形成有不均匀结构。 第二p型半导体层的杂质浓度高于第一p型半导体层的杂质浓度。 第二p型半导体层设置在第一p型半导体层上，并且具有形成在其表面上的不均匀结构。 反射金属层形成在第二p型半导体层上。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20170005242A1

    公开(公告)日：2017-01-05

    申请号：US15138326

    申请日：2016-04-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myeong Ha KIM ,  Sang Yeob SONG ,  Chan Mook LIM

    IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46 ,  H01L33/06

    CPC classification number: H01L33/46 ,  F21K9/23 ,  F21K9/27 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

    Abstract: A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.

    Abstract translation: 半导体发光器件可以包括具有第一表面和第二表面的衬底，第二表面与第一表面相对; 发光结构，其设置在所述基板的所述第一表面上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及设置在所述基板的所述第二表面上并且包括低折射率层和布拉格层的反射器，其中所述布拉格层包括具有不同折射率的多个交替堆叠的层，并且其中所述低折射率层的折射率 低于布拉格层的折射率。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20160087159A1

    公开(公告)日：2016-03-24

    申请号：US14720698

    申请日：2015-05-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myeong Ha KIM ,  Chan Mook LIM ,  Masaaki SOFUE ,  Sang Yeob SONG ,  Mi Jeong YUN

    IPC: H01L33/46 ,  H01L33/44

    CPC classification number: H01L33/46 ,  H01L33/50 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

    Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

    Abstract translation: 一种半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构以及设置在发光结构上的选择性透射反射层，并且包括 具有交替层叠至少一次的具有不同光学厚度的多个电介质层。 具有最大光学厚度和具有最小光学厚度的介电层的光学厚度的介电层的光学厚度的总和在0.75至0.80的范围内。

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