SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20130307007A1

    公开(公告)日:2013-11-21

    申请号:US13896166

    申请日:2013-05-16

    IPC分类号: H01L33/40

    摘要: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

    摘要翻译: 发光器件包括第一半导体层,有源层和第二半导体层,以及分别与第一和第二半导体层电连接的第一和第二电极。 第二电极包括反射焊盘部分,透明电极层,反射指状部分和电极焊盘部分。 反射焊盘部分设置在第二半导体层的上表面的区域中。 透明电极层设置在第二半导体层上,并且具有包围反射焊盘部分的开口,使得透明电极层不与反射焊盘部分接触。 反射指部从反射板部延伸,并且其至少一部分设置在透明电极层上。 电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20150108520A1

    公开(公告)日:2015-04-23

    申请号:US14454612

    申请日:2014-08-07

    摘要: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

    摘要翻译: 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层,设置在电流阻挡层上的反射部分,设置在第二导电类型半导体层上的透明电极层,设置在电流阻挡层的区域内的焊盘电极部分,以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开,并且具有围绕反射部分的开口。 在一些示例中,透明电极层可以进一步与电流阻挡层间隔开。

    AIR CONDITIONER
    3.
    发明申请
    AIR CONDITIONER 审中-公开

    公开(公告)号:US20180058727A1

    公开(公告)日:2018-03-01

    申请号:US15643050

    申请日:2017-07-06

    IPC分类号: F25B1/00

    摘要: Disclosed herein is an air conditioner in which flow noise of a refrigerant is reduced. An air conditioner includes a compressor configured to compress a refrigerant, an outdoor heat exchanger in which the refrigerant exchanges heat with outside air, an expansion device configured to expand the refrigerant, an indoor heat exchanger in which the refrigerant exchanges heat with indoor air, and a muffler configured to reduce flow noise of the refrigerant flowing into the indoor heat exchanger, wherein the muffler includes a shell including a refrigerant inlet and a refrigerant outlet, a first baffle disposed at one side of an inner part of the shell and including a plurality of first holes, a plurality of pipes inserted into the plurality of first holes and serving as passages through which the refrigerant moves, and a second baffle disposed at the other side of the inner part of the shell and including a plurality of second holes through which the refrigerant passing through the pipe passes.

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    制造半导体发光器件的方法

    公开(公告)号:US20140045288A1

    公开(公告)日:2014-02-13

    申请号:US13965846

    申请日:2013-08-13

    IPC分类号: H01L33/58

    摘要: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.

    摘要翻译: 一种制造半导体发光器件的方法包括制备包括第一和第二导电类型半导体层和介于其间的有源层的发光结构,在发光结构的至少一个表面上形成多个晶种,并形成多个 通过从多个种子形成光波导组合并组合光波导组,从而形成圆顶形突起。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20130320351A1

    公开(公告)日:2013-12-05

    申请号:US13906044

    申请日:2013-05-30

    IPC分类号: H01L33/36 H01L33/02

    CPC分类号: H01L33/36 H01L27/15 H01L33/02

    摘要: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

    摘要翻译: 提供了半导体发光器件,并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层,有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。