SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:US20130113005A1

    公开(公告)日:2013-05-09

    申请号:US13669179

    申请日:2012-11-05

    Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.

    Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 在发光结构上形成反射结构,并且包括由多个纳米棒和多个纳米棒之间的空气填充空间以及形成在纳米棒层上的反射金属层组成的纳米棒层。

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