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1.发明授权公开(公告)号：US09871162B2
公开(公告)日：2018-01-16
申请号：US14594058
申请日：2015-01-09
发明人： William Solari , Min Ho Kim , Heon Ho Lee
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H2) and at least one of ammonia (NH3) and nitrogen (N2). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950° C. to 1040° C.
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2.发明授权Method of manufacturing semiconductor device and method of maintaining deposition apparatus 有权制造半导体器件的方法和保持沉积设备的方法公开(公告)号：US09564316B2
公开(公告)日：2017-02-07
申请号：US14578940
申请日：2014-12-22
发明人： Dong Yul Lee , Sang Heon Han , Seung Hyun Kim , Jang Mi Kim , William Solari , Hyun Wook Shim , Suk Ho Yoon
CPC分类号： H01L21/0254 , C23C16/34 , C23C16/4404 , H01L21/02107 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02496 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
摘要翻译： 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。
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