公开(公告)号：US20200286999A1

公开(公告)日：2020-09-10

申请号：US16881133

申请日：2020-05-22

申请人： SAMSUNG ELECTRONICS CO., LTD

发明人： Shigenobu MAEDA ,  Seunghan SEO ,  Yeohyun SUNG

IPC分类号： H01L29/16 ,  H01L29/165 ,  H01L29/267 ,  H01L29/778 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/20 ,  H01L29/22 ,  H01L29/78

摘要： A semiconductor device, a field effect transistor, and a fin field effect transistor are provided. The semiconductor device may include a channel layer, a source/drain layer, and a gate electrode. The channel layer is provided on a substrate and extends in a direction perpendicular to a top surface of the substrate. The source/drain layer is disposed at a side of the channel layer and is electrically connected to the channel layer. The gate electrode is provided adjacent to at least one of surfaces of the channel layer. The channel layer includes a two-dimensional atomic layer made of a first material.

公开(公告)号：US20180197957A1

公开(公告)日：2018-07-12

申请号：US15911182

申请日：2018-03-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Shigenobu MAEDA ,  Seunghan SEO ,  Yeohyun SUNG

IPC分类号： H01L29/16 ,  H01L29/20 ,  H01L29/786 ,  H01L29/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165

摘要： A semiconductor device, a field effect transistor, and a fin field effect transistor are provided. The semiconductor device may include a channel layer, a source/drain layer, and a gate electrode. The channel layer is provided on a substrate and extends in a direction perpendicular to a top surface of the substrate. The source/drain layer is disposed at a side of the channel layer and is electrically connected to the channel layer. The gate electrode is provided adjacent to at least one of surfaces of the channel layer. The channel layer includes a two-dimensional atomic layer made of a first material.

公开(公告)号：US20210313430A1

公开(公告)日：2021-10-07

申请号：US17352989

申请日：2021-06-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Shigenobu MAEDA ,  Seunghan SEO ,  Yeohyun SUNG

IPC分类号： H01L29/16 ,  H01L29/165 ,  H01L29/267 ,  H01L29/778 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/20 ,  H01L29/22 ,  H01L29/78

摘要： A semiconductor device is provided and includes a substrate and a stack on the substrate. The stack includes plural active layers that are vertically stacked and spaced apart from each other, and plural gate electrodes that are on the active layers, respectively, and vertically stacked. Each active layer includes a channel layer under a corresponding one of the gate electrodes, and a source/drain layer disposed at a side of the channel layer and electrically connected to the channel layer. The channel layer is made of a two-dimensional atomic layer of a first material.

公开(公告)号：US20170162654A1

公开(公告)日：2017-06-08

申请号：US15340199

申请日：2016-11-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Shigenobu MAEDA ,  Seunghan SEO ,  Yeohyun SUNG

IPC分类号： H01L29/16 ,  H01L29/08 ,  H01L29/78 ,  H01L29/04 ,  H01L29/22 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/1606 ,  H01L29/04 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/267 ,  H01L29/517 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786

摘要： A field effect transistor and a semiconductor device including the same are provided. The semiconductor device may include a channel layer, which is provided on a substrate and includes a two-dimensional atomic layer made of a first material, and a source/drain layer, which is provided on the substrate and includes a second material. The first material may be one of phosphorus allotropes, the second material may be one of carbon allotropes, and the channel layer and the source/drain layer may be connected to each other by covalent bonds between the first and second materials.