公开(公告)号：US09482584B2

公开(公告)日：2016-11-01

申请号：US13776973

申请日：2013-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-hyeok Im ,  Kyol Park ,  Tae-je Cho

IPC: G01K7/00 ,  G01K7/34 ,  G01K7/16 ,  G01K7/42

CPC classification number: G01K7/34 ,  G01K7/16 ,  G01K7/42

Abstract: A method of predicting a temperature includes operatively coupling a temperature prediction circuit to a device including a semiconductor chip, determining a correlation between a current and voltage of the temperature prediction circuit, and predicting a temperature with respect to power applied to the device using the determined correlation.

Abstract translation: 预测温度的方法包括将温度预测电路可操作地耦合到包括半导体芯片的装置，确定温度预测电路的电流和电压之间的相关性，以及使用所确定的温度预测相对于施加到装置的功率的温度 相关性。

公开(公告)号：US09589945B2

公开(公告)日：2017-03-07

申请号：US14804880

申请日：2015-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cha-jea Jo ,  Yun-hyeok Im ,  Tae-je Cho

IPC: H01L25/18 ,  H01L23/367 ,  H01L23/48 ,  H01L25/065 ,  H01L23/36 ,  H01L23/427 ,  H01L23/532 ,  H01L23/31

CPC classification number: H01L25/18 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/427 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L25/0652 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16195

Abstract: A semiconductor package includes a package base substrate, at least one first semiconductor chip disposed on the package base substrate, and at least one stacked semiconductor chip structure disposed on the package base substrate adjacent to the at least one first semiconductor chip. The at least one stacked semiconductor chip includes a plurality of second semiconductor chips. A penetrating electrode region including a plurality of penetrating electrodes is disposed adjacent to an edge of the at least one stacked semiconductor chip structure.

Abstract translation: 半导体封装包括封装基底基板，设置在封装基底基板上的至少一个第一半导体芯片以及设置在与该至少一个第一半导体芯片相邻的封装基底基板上的至少一个层叠半导体芯片结构。 所述至少一个层叠半导体芯片包括多个第二半导体芯片。 包括多个穿透电极的穿透电极区域设置成与所述至少一个堆叠的半导体芯片结构的边缘相邻。

公开(公告)号：US10852080B2

公开(公告)日：2020-12-01

申请号：US15686574

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-hyeok Im ,  Myung-kyoon Yim ,  Kyoung-min Lee ,  Kyung-soo Lee

IPC: F28F27/00 ,  G05B15/02 ,  G06F1/20 ,  F28F13/00 ,  G06F1/324 ,  G06F1/3296

Abstract: A controller configured to: acquire a temperature of a first component and a temperature of a second component; and adjust a thermal resistance of a medium between the first component and the second component based on the acquired temperature of the first component, the acquired temperature of the second component, a first temperature limit of the first component, and a second temperature limit of the second component.