公开(公告)号：US20210210504A1

公开(公告)日：2021-07-08

申请号：US16735854

申请日：2020-01-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoshitaka OTSU ,  Kenichi OKABE ,  Takashi ARAI

IPC: H01L27/11582 ,  H01L23/522 ,  H01L21/768

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory stack structures vertically extending through the alternating stack, a perforated dielectric moat structure vertically extending through the alternating stack, and an interconnection via structure laterally surrounded by the perforated dielectric moat structure and vertically extending through each insulating layer within the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel and a vertical stack of memory elements located at levels of the electrically conductive layers. The perforated dielectric moat structure includes a plurality of lateral openings at each level of the insulating layers, and does not include any opening at levels of the electrically conductive layers.

公开(公告)号：US20180019256A1

公开(公告)日：2018-01-18

申请号：US15332429

申请日：2016-10-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fumitaka AMANO ,  Takashi ARAI ,  Genta MIZUNO ,  Shigehisa INOUE ,  Naoki TAKEGUCHI ,  Takashi HAMAYA

IPC: H01L29/423 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L27/11582 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53266 ,  H01L27/11565 ,  H01L27/1157

Abstract: Void formation in tungsten lines in a three-dimensional memory device can be prevented by providing polycrystalline aluminum oxide liners in portions of lateral recesses that are laterally spaced from backside trenches by a distance grater than a predefined lateral offset distance. Tungsten nucleates on the polycrystalline aluminum oxide liners prior to nucleating on a metallic liner layer. Thus, tungsten layers can be deposited from the center portion of each backside recess, and the growth of tungsten can proceed toward the backside trenches. By forming the tungsten layers without voids, structural integrity of the three-dimensional memory device can be enhanced.