公开(公告)号：US20210183883A1

公开(公告)日：2021-06-17

申请号：US16710572

申请日：2019-12-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yanli ZHANG ,  Dong-il MOON ,  Raghuveer S. MAKALA ,  Peng ZHANG ,  Wei ZHAO ,  Ashish BARASKAR

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/28 ,  H01L27/11526 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11573

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.

公开(公告)号：US20210183882A1

公开(公告)日：2021-06-17

申请号：US16710481

申请日：2019-12-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yanli ZHANG ,  Dong-il MOON ,  Raghuveer S. MAKALA ,  Peng ZHANG ,  Wei ZHAO ,  Ashish BARASKAR

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L23/532 ,  H01L21/311 ,  H01L27/11526 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11573 ,  H01L21/28 ,  H01L23/528

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.

公开(公告)号：US20200251488A1

公开(公告)日：2020-08-06

申请号：US16388054

申请日：2019-04-18

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takaaki IWAI ,  Makoto KOTO ,  Sayako NAGAMINE ,  Ching-Huang LU ,  Wei ZHAO ,  Yanli ZHANG ,  James KAI

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L21/762

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory pillar structures extending through the alternating stack. Each of the memory pillar structures includes a respective memory film and a respective vertical semiconductor channel Dielectric cores contact an inner sidewall of a respective one of the vertical semiconductor channels. A drain-select-level isolation structure laterally extends along a first horizontal direction and contacts straight sidewalls of the dielectric cores at a respective two-dimensional flat interface. The memory pillar structures may be formed on-pitch as a two-dimensional periodic array, and themay drain-select-level isolation structure may cut through upper portions of the memory pillar structures to minimize areas occupied by the drain-select-level isolation structure. maymay